SSG4407P -15a, -30v, r ds(on) 9 m ? p-ch enhancement mode power mosfet elektronische bauelemente 15-jul-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features low r ds(on) provides higher efficiency and extends battery life miniature so-8 surface mount package saves board sp ace high power and current handling capability extended vgs range (25) for battery pack applicati ons application pwmdc-dc converters, power management in portable and battery-powered products such as compu ters, printers, battery charger, telecommunication power system, and telephones power system. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current 1 t a =25c i d -15 a t a =70c -11 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s -2.1 a total power dissipation 1 t a =25c p d 3.1 w t a =70c 2.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-case (max.) 1 t Q 5 sec r jc 25 c / w thermal resistance junction-ambient (max.) 1 t Q 5 sec r ja 50 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. sop-8 ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. s s s g d d d d
SSG4407P -15a, -30v, r ds(on) 9 m ? p-ch enhancement mode power mosfet elektronische bauelemente 15-jul-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds =0, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs =0 - - -5 v ds = -24v, v gs =0, t j =55c on-state drain current 1 i d(on) -50 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 9 m v gs = -10v, i d = -13a - - 13 v gs = -4.5v, i d = -11a - - 11 v gs = -10v,i d = -13 a,t j =55c forward transconductance 1 g fs - 44 - s v ds = -5v, i d = -13a diode forward voltage v sd - -0.7 - v i s =2.1a, v gs =0 dynamic 2 total gate charge q g - 37 - nc i d = -13a v ds = -15v v gs = -10v gate-source charge q gs - 10 - gate-drain charge q gd - 14.5 - switching turn-on delay time t d(on) - 19 - ns v dd = -15v i d = -1a v gen = -10v r l = 6 rise time t r - 11 - turn-off delay time t d(off) - 121 - fall time t f - 68 - notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSG4407P -15a, -30v, r ds(on) 9 m ? p-ch enhancement mode power mosfet elektronische bauelemente 15-jul-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
SSG4407P -15a, -30v, r ds(on) 9 m ? p-ch enhancement mode power mosfet elektronische bauelemente 15-jul-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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