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march 2012 doc id 15603 rev 2 1/18 18 STL120N2VH5 n-channel 20 v, 0.002 , 28 a stripfet? v power mosfet in powerflat? 5x6 package features improved die-to-footprint ratio very low profile package very low thermal resistance conduction losses reduced switching losses reduced 2.5 v gate drive very low threshold device applications switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to an fom that is among the best in its class. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL120N2VH5 20 v < 0.003 28 a powerflat? 5x6 1 2 3 4 ! - 6 " o t t o m 6 i e w $ $ $ $ 3 3 3 ' 4 o p 6 i e w table 1. device summary order code marking package packaging STL120N2VH5 120n2vh5 powerflat? 5x6 tape and reel www.st.com
contents STL120N2VH5 2/18 doc id 15603 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 STL120N2VH5 electrical ratings doc id 15603 rev 2 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d (1) 1. the value is rated according to rthj-case drain current (continuous) at t c = 25 c 120 a i d (1) drain current (continuous) at t c = 100 c 75 a i d (2) 2. when mounted on fr-4 board of 1in2, 2oz cu. t < 10 sec drain current (continuous) at t pcb = 25 c 28 a i dm (2),(3) 3. pulse width limited by safe operating area drain current (pulsed) 112 a p tot (1) total dissipation at t c = 25 c 80 w p tot (2) total dissipation at t pcb = 25 c 4 w derating factor (2) 0.03 w/c t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max. 1.56 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1in2, 2oz cu. t < 10 sec thermal resistance junction-pcb max. 31.25 c/w table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 20 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 14 v) 300 mj electrical characteristics STL120N2VH5 4/18 doc id 15603 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds =20 v, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 8 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.70 v r ds(on) static drain-source on resistance v gs = 4.5 v, i d = 14 a v gs = 2.5 v, i d = 14 a 0.002 0.0028 0.003 0.004 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15 v, f = 1 mhz, v gs = 0 - 4660 870 130 - pf pf pf t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 10 v, i d = 14 a r g =4.7 v gs = 4.5 v (see figure 13 ) - 21 60 76 55 - ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10 v, i d = 28 a, v gs = 2.5 v (see figure 14 ) - 29 9.8 13 - nc nc nc STL120N2VH5 electrical characteristics doc id 15603 rev 2 5/18 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 28 112 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 28 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s, v dd = 16 v (see figure 15 ) - 34 30 1.4 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s, v dd = 16 v, t j = 150 c (see figure 15 ) - 35 31 1.8 ns nc a electrical characteristics STL120N2VH5 6/18 doc id 15603 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n m s m s s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ) $ m ! ! - v 2 $ 3 o n ) $ ! m / h m 6 ' 3 6 ! - v STL120N2VH5 electrical characteristics doc id 15603 rev 2 7/18 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |