for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC718LP4 / 718lp4e gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz v01.1008 general description features functional diagram typical applications electrical specifcations, t a = +25c, rbias = 3.92k ohms* p arameter vdd = +3v vdd = +5v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 0.6 - 1.0 1.0 - 1.4 0.6 - 1.0 1.0 - 1.4 ghz gain 26 30.5 25 27.5 27 32 25 29 db gain variation o ver temperature 0.01 0.01 0.01 0.01 db/ c noise f igure 0.95 0.75 0.95 0.8 db i nput r eturn l oss 15 20 15.5 23 db o utput r eturn l oss 13 10 15.5 13 db o utput p ower for 1 db compression ( p 1db) 13 15.5 13 15.7 19 21.5 19 21.5 dbm s aturated o utput p ower ( p sat) 19 19 23.5 23.3 dbm o utput third o rder i ntercept ( ip 3) 35 34.5 40.5 40 dbm s upply current ( i dd) 187 200 187 200 254 281 254 281 ma * r bias resistor sets current, see application circuit herein the h m c718 lp 4( e ) is a gaas p h em t mmi c l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 600 and 1400 m hz. the amplifer has been optimized to provide 0.9 db noise fgure, 32 db gain and +40 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c718 lp 4( e ) shares the same package and pinout with the h m c719 lp 3( e ) 1.3 - 2.9 ghz l na. the h m c718 lp 4( e ) can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. noise f igure: 0.9 db gain: 32 db o utput ip 3: +40 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 24 l ead 4x4 mm sm t p ackage: 16 mm 2 the h m c718 lp 4( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? access p oints ? test e quipment
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k gain vs. temperature [2] gain vs. temperature [1] reverse isolation vs. temperature [1] -40 -30 -20 -10 0 10 20 30 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vdd=5v vdd=3v frequency (ghz) response (db) s11 s21 s22 -60 -50 -40 -30 -20 -10 0 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) isolation (db) -25 -20 -15 -10 -5 0 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) return loss (db) 20 25 30 35 40 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) gain (db) -50 -40 -30 -20 -10 0 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) return loss (db) 20 25 30 35 40 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) gain (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature [1] [2] psat vs. temperature [1] [2] HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz output ip3 and idd vs. supply voltage @ 700 mhz [3] output ip3 vs. temperature [1] [2] noise figure vs. temperature [1] [2] output ip3 and idd vs. supply voltage @ 1300 mhz [3] [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k [3] r bias = 3.92k 15 20 25 30 35 40 45 0 50 100 150 200 250 300 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 idd1 idd2 ip3 (dbm) idd (ma) voltage supply (v) 15 20 25 30 35 40 45 0 50 100 150 200 250 300 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 idd1 idd2 ip3 (dbm) idd (ma) voltage supply (v) 12 14 16 18 20 22 24 26 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v 12 14 16 18 20 22 24 26 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.5 0.7 0.9 1.1 1.3 1.5 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c 25 30 35 40 45 50 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 1300 mhz [1] HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz power compression @ 1300 mhz [2] power compression @ 700 mhz [1] power compression @ 700 mhz [2] [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k [3] r bias = 3.92k gain, power & noise figure vs. supply voltage @ 700 mhz [3] gain, power & noise figure vs. supply voltage @ 1300 mhz [3] -5 0 5 10 15 20 25 30 -30 -25 -20 -15 -10 -5 0 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -5 0 5 10 15 20 25 30 -30 -25 -20 -15 -10 -5 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 10 15 20 25 30 35 40 0.6 0.7 0.8 0.9 1 1.1 1.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) 10 15 20 25 30 35 40 0.6 0.7 0.8 0.9 1 1.1 1.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) -5 0 5 10 15 20 25 30 35 -30 -27 -24 -21 -18 -15 -12 -9 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -5 0 5 10 15 20 25 30 35 -30 -25 -20 -15 -10 -5 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz output ip3 vs. rbias @ 900 mhz gain, noise figure & rbias @ 900 mhz 23 25 27 29 31 33 0.5 0.7 0.9 1.1 1.3 1.5 100 1000 10000 100000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms) 32 34 36 38 40 42 44 1 10 100 1000 10000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings drain bias voltage (vdd) 5.5 v rf input p ower ( rfin) (vdd = +5 vdc) -5 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 20 m w /c above 85 c) 1.8 w thermal r esistance (channel to ground paddle) 50 c/w s torage temperature -65 to +150 c o perating temperature -40 to +85 c ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) idd1 (ma) idd2 (ma) 2.7 22 153 3.0 32 155 3.3 43 157 4.5 77 164 5.0 88 166 5.5 95 169 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. vdd (rbias = 3.92k) vdd (v) rbias idd1 (ma) idd2 (ma) min max r ecommended 3v 1k [1] o pen circuit 2.7k 27 155 3.9k 32 155 10k 41 155 5v 0 o pen circuit 820 67 166 3.92k 88 166 10k 92 166 [1] o peration with vdd= 3v and rbias < 1k o hm may result in the part becoming conditionally stable which is not recommended. absolute bias resistor range & recommended bias resistor values for idd HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c718 lp 4 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] h718 xxxx h m c718 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h718 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin number f unction description i nterface schematic 1, 3 - 5, 7 - 16, 18, 20, 22, 23 n/c no connection necessary. these pins may be connected to rf /dc ground without affecting performance. 2 rfin this pin is dc coupled and matched to 50 o hms. 6 res this pin is used to set the dc current of the amplifer by selection of external bias resistor. s ee application circuit. 17 rfout rf output and dc bia s for the second amplifer. s ee application circuit for off-chip components. 19 rfin2 this pin is dc coupled. an off-chip dc blocking capacitor is required. 21 rfout1 this pin is matched to 50 o hms. 24 vdd p ower s upply voltage for the frst amplifer. choke inductor and bypass capacitors are required. s ee application circuit. pin descriptions HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb i tem description j1 - j3 p cb m ount sm a connector j4 - j5 2mm vertical m olex connector c1, c8, c12 220 p f capacitor, 0402 p kg. c3 10 n f capacitor, 0402 p kg. c4, c11 10 n f capacitor, 0603 p kg. c5, c13 1000 p f capacitor, 0603 p kg. c10 4.7 u f capacitor, 0805 p kg. l 1 15 nh i nductor, 0402 p kg. l 2 18 nh i nductor, 0603 p kg. l 4 47 nh i nductor, 0603 p kg. r 1 r bias r esistor, 0402 p kg. r 2, r 3 0 o hm r esistor, 0402 p kg. u1 h m c718 lp 4( e ) amplifer p cb [2] 121126 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: arlon 25 fr list of materials for evaluation pcb 121128 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. HMC718LP4 / 718lp4e v01.1008 gaas phemt mmic high ip3 low noise amplifier, 0.6 - 1.4 ghz
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