cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 1/ 8 MTDN1034C6 cystek product specification n-channel mosfet (dual transistors) MTDN1034C6 features ? high speed switching ? low-voltage drive(1.5v) ? easily designed drive circuits ? easy to use in parallel ? pb-free package equivalent circuit outline the following characteristics apply to both tr1 and tr2 absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss 8 v continuous drain current @ v gs =4.5v, t a =25 c 0.3 continuous drain current @ v gs =4.5v, t a =85 c i d 0.22 pulsed drain current i dm 1.6 (note 1) a power dissipation pd 150 (note 2) mw operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : 1. pulse test, pulse width 300 s, duty 2% 2 . 120mw per element mu st not be exceeded . sot-563 d1 g2 s2 s1 g1 d2 bv dss 30v i d 0.3a v gs =4.5v, i d =200ma 0.85 1.23 v gs =2.5v, i d =175ma MTDN1034C6 tr1 tr2 v gs =1.8v, i d =150ma 1.8 r dson(typ) v gs =1.5v, i d =40ma 2.3
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 2/ 8 MTDN1034C6 cystek product specification electrical characteristics (ta=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss* 30 - - v v gs =0, i d =10 a v gs(th) 0.5 0.78 1.1 v v ds =v gs , i d =250 a i gss - - 1 a v gs =8v, v ds =0 i dss - - 100 na v ds =30v, v gs =0 - 0.85 1.5 v gs =4.5v, i d =200ma - 1.23 3 v gs =2.5v, i d =175ma - 1.8 4 v gs =1.8v, i d =150ma r ds(on)* - 2.3 5 v gs =1.5v, i d =40ma g fs - 460 - ms v ds =10v, i d =200ma dynamic c iss - 33.5 - c oss - 6.1 - c rss - 2.5 - pf v ds =15v, v gs =0, f=1mhz qg - 495 - qgs - 49 - qgd - 175 - pc v ds =15v, i d =300ma, v gs =4.5v t d(on) - - 50 t r - - 25 t d(off) - - 50 t f - - 25 ns v dd =15v, i d =200ma, v gs =4.5v, r g =10 source-drain diode i s - - 0.3 i sm - - 2 a v sd - 0.81 1 v i s =150ma, v gs =0v *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTDN1034C6 sot-563 (pb-free and halogen-free package) 3000 pcs / tape & reel kl
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 3/ 8 MTDN1034C6 cystek product specification typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 012345 v ds , drain-source voltage(v) i d , drain current (a) 2.5v v gs =1.5v 2v 3v 3.5v 4v 5.5, 5v, 4.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =2.5v v gs =1.8v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =220ma i d =190ma i d =100ma i d =50ma drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =2.7v, i d =190ma v gs =2.5v, i d =50ma v gs =4.5v, i d =220ma
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 4/ 8 MTDN1034C6 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs( th) , normalized threshold voltage i d =250 a single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c r ja =833c/w gate charge characteristics 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =300ma maximum drain current vs junctiontemperature 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =833c/w maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) 100 s 1ms 10ms t a =25c, tj=150c, v gs =4.5v, r ja =833c/w single pulse 100ms dc
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 5/ 8 MTDN1034C6 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v 150c 25c -40c 0c forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10 v v ds =5v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =833 c/w
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 6/ 8 MTDN1034C6 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 7/ 8 MTDN1034C6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c833c6 issued date : 2012.08.07 revised date : 2013.08.27 page no. : 8/ 8 MTDN1034C6 cystek product specification sot-563 dimension inches millimeters inches millimeters dim min. max. min. max. 6-lead sot-563 plastic surface mounted package cystek package code: c6 style: pin 1. source1 (s1) pin 2. gate1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) pin 6. drain1 ( d1 ) marking: product code date code: year+month year: 6 2006, 7 2007 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 kl dim min. max. min. max. a 0.021 0.024 0.525 0.600 b 0.007 0.011 0.170 0.270 a1 0.000 0.002 0.000 0.050 e1 0.043 0.051 1.100 1.300 e 0.018 0.022 0.450 0.550 e 0.059 0.067 1.500 1.700 c 0.004 0.006 0.090 0.160 l 0.004 0.012 0.100 0.300 d 0.059 0.067 1.500 1.700 7 ref 7 ref notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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