ty p-channel switching ( ? 20v , ? 2.5a) rtr025p02 z f eatu r es 1) low on-resist ance. 2) built-in g-s protection diode. 3) small and surface mount package (t smt 3 ). z a pplication pow e r sw itching, dc / dc converter . z st r u c t u r e mos fet z ex te rna l dime ns ions (unit : mm) each lead has same dimensions abbreviated symbol : ty tsmt3 0.7 0.1 0.85 0.1 2.8 0.2 0.4 + 0.1 ? 0.05 1.6 + 0.2 ? 0.1 0.16 0.3~0.6 + 0.1 ? 0.06 each lead has same dimensions (2) (1) (3) 0~0.1 2.9 0.1 1.9 0.2 0.95 0.95 1.0max. z packag in g sp ecificatio n s package code taping basic ordering unit (pieces) rtr025p02 tl 3000 type z a b solute maximum ratings (t a= 25 c) ? 1 ? 1 ? 2 parameter v v dss symbol ? 20 v v gss 12 a i d 2.5 a i dp 10 a i s ? 0.8 a i sp ? 3.2 w p d 1.0 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) z equiv a le nt c i rc uit (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) z t h e rmal resist an ce (t a= 25 c) c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd body diode characteristics (source-drain characteristics) v sd ?? ? 1.2 v forward voltage gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge min. ?? 10 av gs = 12v, v ds =0v v dd ? 15v typ. max. unit conditions ? 20 ?? vi d = ? 1ma, v gs =0v ?? ? 1 av ds = ? 20v, v gs =0v ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 70 95 i d = ? 2.5a, v gs = ? 4.5v ? 75 105 m ? m ? m ? i d = ? 2.5a, v gs = ? 4.0v ? 115 160 i d = ? 1.25a, v gs = ? 2.5v 2.3 ?? sv ds = ? 10v, i d = ? 1.2a ? 630 ? pf v ds = ? 10v ? 110 75 ? pf v gs =0v ? 12 ? pf f=1mhz ? 18 ? ns ? 50 ? ns ? 20 ? ns ? 7 ? ns ? 1.5 ? nc ? 2.0 ? nc v gs = ? 4.5v ?? nc i d = ? 2.5a i s = ? 0.8a, v gs =0v v dd ? 15 v i d = ? 1.25a v gs = ? 4.5v r l =12 ? r gs =10 ? ? pulsed ? ? ? ? ? ? rtr025p02 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
|
