unisonic technologies co., ltd urfp150 preliminary power mosfet www.unisonic.com.tw 1 of 2 copyright ? 2012 unisonic technologies co., ltd qw-r502-754.a 41a, 100v n-channel power mosfet ? description the utc urfp150 is an n-channel enhancement mosfet using utc?s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. ? features * r ds(on) <55m ? @ v gs =10v,i d =25a * high switching speed to-247 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 urfp150l-t47-t URFP150G-T47-T to-247 g d s tube note: pin assignment: g: gate d: drain s: source
urfp150 preliminary power mosfet unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r502-754.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v continuous drain current continuous i d 41 a pulsed i dm 160 a avalanche current i ar 41 a single pulsed avalanche energy (note 2) e as 830 mj power dissipation p d 192 w junction temperature t j -55~+150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. l = 740 h, i as = 41 a, v dd = 25 v, r g = 25 ? ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a 100 v drain-source leakage current i dss v ds =80v 10 a gate-source leakage current forward i gss v gs =+20v +100 na reverse v gs =-20v -100 na on characteristics gate threshold voltage v gs ( th ) i d =250a 2 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =25a 55 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 2800 pf output capacitance c oss 1100 pf reverse transfer capacitance c rss 280 pf switching parameters total gate charge q g v dd =50v, v gs =10v, i d =41a, i g =100a, 140 nc gate to source charge q gs 29 nc gate to drain charge q gd 68 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v 16 ns rise time t r 120 ns turn-off delay time t d ( off ) 60 ns fall-time t f 81 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 41 a maximum body-diode pulsed current i sm 160 a drain-source diode forward voltage v sd i s =41a 2.5 v utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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