sop8 plastic-encapsulate mosfets CJQ4438 n-channel mosfet description the CJQ4438 uses advanced trench te chnology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (note 1) i d 8.2 a pulsed drain current (note 2) i dm 40 a power dissipation p d 1.25 w thermal resistance from junction to ambient (note 1) r ja 100 /w junction temperature t j 150 storage temperature t stg -55~+150 sop8 s s s g d d d d 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,jan,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage drain current i dss v ds =60v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =8.2a 22 m ? drain-source on-resistance (note 3) r ds(on) v gs =4.5v, i d =7.6a 30 m ? forward tranconductance (note 3) g fs v ds =5v, i d =8.2a 1 0 s diode forward voltage (note 3) v sd i s =1a, v gs = 0v 1 v dynamic parameters (note 4) input capacitance c iss 2300 pf output capacitance c oss 155 pf reverse transfer capacitance c rss v ds =30v,v gs =0v,f =1mhz 116 pf switching parameters (note 4) turn-on delay time t d(on) 8.2 ns turn-on rise time t r 5.5 ns turn-off delay time t d(off) 29.7 ns turn-off fall time t f v gs =10v,v ds =30v r l =3.6 ? ,r gen =3 ? 5.2 ns total gate charge (10v) 58 nc total gate charge (4.5v) q g 30 nc gate-source charge q gs 6 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =8.2a 14.4 nc notes : 1. the value of r ja is measured with the device mounted on 1 in 2 fr4 board with 2oz. copper, in a still air environment with t a =25 .the value in any given application depends on the user?s specific board design. the current rating is based on the t 10s thermal resistance rating. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 2%. 4. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,jan,2013
012345 0 5 10 15 20 024681 0 0 20 40 60 80 024681 0 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 0246 0 5 10 15 20 25 50 75 100 125 1.5 1.6 1.7 1.8 v gs =4v,4.5v,5v,5.5v 3.5v v gs =3v ta=25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =8.2a ta=25 pulsed v gs ?? r ds(on) on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs =4.5v v gs =10v i d ?? r ds(on) ta=25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) CJQ4438 v sd i s ?? ta=25 pulsed source current i s (a) source to drain voltage v sd (v) v ds =5v ta=25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) threshold voltage i d =250ua threshold voltage v th (v) junction temperature t j ( ) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,jan,2013
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