2KG026075YQ hangzhou?silan?microelectronics?co.,ltd rev:1.0???????2006.04.25 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 2KG026075YQ?switching?diode?chips description ? ? 2KG026075YQ? is? a? high? speed? switching? diode? chip fabricated?in?planar?technology. ? ? this?chip?can?be?encapsulated?as?1n4148?switching?diode. ? ?w hen?the?chip?is?selected?glass?package,?the?chip?thickness is?100 m m,? and? the? top? electrodes? material? is? ag? bump ,?the back-side?electrodes?material?is?ag. ? ? chip?size:?0.26?x?0.26?(mm) 2 . 2kg026xxx?chip?topography 2KG026075YQ?electrical?characteristics ?(t j =25 c) characteristics symbol test?conditions min. typ. max. unit i f =10ma. -- -- 1.0 v forward?voltage v f i f =100ma. 0.62 0.9 1.2 v reverse?voltage v br i b =100 m a. 100 120 -- v v r =20v. -- -- 25 na reverse?current i r v r =75v. -- -- 5 m a diode?capacitance c d f=1mhz;?v r =0. -- 1.9 4 pf reverse?recovery?time t rr when?switched?from?i f =10ma?to v r =6v;?r l =100 w ;?measured?at i r =1ma. -- -- 4 ns 2KG026075YQ?appearance ? top?side?material?is?ag?ball ? parameter symbol min. type max. unit chip?size d 220 -- 240 m m chip?thickness c 85 -- 120 m m bump?diameter a 135 -- 160 m m bump?height b 20 -- 40 m m scribe?line?width / -- 40 -- m m chip?appearance?diagram
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