for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC715LP3 / 715lp3e gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz v01.0808 general description features functional diagram the h m c715 lp 3( e ) is a gaas p h em t mmi c l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 2.1 and 2.9 ghz. the amplifer has been optimized to provide 0.9 db noise fgure, 19 db gain and +33 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c715 lp 3( e ) can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. noise f igure: 0.9 db gain: 19 db o utput ip 3: +33 dbm s ingle s upply: +3v to +5v 16 l ead 3x3mm q fn p ackage: 9 mm 2 typical applications the h m c715 lp 3( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? p ublic s afety r adio ? access p oints electrical specifcations t a = +25 c, rbias = 2k ohms for vdd = +5v, rbias = 47k ohms for vdd = +3v [1] p arameter vdd = +3v vdd = +5v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 2.1 - 2.9 2.3 - 2.7 2.1 - 2.9 2.3 - 2.7 m hz gain 14.5 18 15 18 15.5 19 16.5 19 db gain variation o ver temperature 0.01 0.01 0.01 0.01 db/ c noise f igure 0.9 1.2 0.9 1.2 0.9 1.2 0.9 1.2 db i nput r eturn l oss 11.5 11 11.5 11 db o utput r eturn l oss 14 13.5 12.5 12 db o utput p ower for 1 db compression ( p 1db) 10.5 14.5 12.5 15 15 19 16.5 19.5 dbm s aturated o utput p ower ( p sat) 16 16.5 20 20.5 dbm o utput third o rder i ntercept ( ip 3) 28 28.5 33 33.5 dbm s upply current ( i dd) 47 65 47 65 95 126 95 126 ma [1] r bias resistor sets current, see application circuit herein
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] -30 -24 -18 -12 -6 0 6 12 18 24 30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5v 3v frequency (ghz) response (db) s11 s21 s22 -20 -15 -10 -5 0 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) return loss (db) HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz [1] vdd = 5v, r bias = 2k [2] vdd = 3v, r bias = 47k gain vs. temperature [2] 12 14 16 18 20 22 24 26 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) gain (db) gain vs. temperature [1] 12 14 16 18 20 22 24 26 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) gain (db) reverse isolation vs. temperature [1] -50 -45 -40 -35 -30 -25 -20 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) isolation (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature [1] [2] psat vs. temperature [1] [2] 10 12 14 16 18 20 22 24 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) psat (dbm) vdd=5v vdd=3v 9 11 13 15 17 19 21 23 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz output ip3 and supply current vs. supply voltage @ 2300 mhz [3] [1] vdd = 5v, r bias = 2k [2] vdd = 3v, r bias = 47k [3] r bias = 2k for vdd = 5v, r bias = 47k for vdd = 3v [4] m easurement reference plane shown on evaluation p cb drawing. output ip3 vs. temperature [1] [2] 20 23 26 29 32 35 38 41 44 2 2.2 2.4 2.6 2.8 3 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v 20 22 24 26 28 30 32 34 36 5 20 35 50 65 80 95 110 125 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) idd ip3 noise figure vs. temperature [1] [2] [4] 0 0.3 0.6 0.9 1.2 1.5 1.8 2 2.2 2.4 2.6 2.8 3 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c output ip3 and supply current vs. supply voltage @ 2700 mhz [3] 22 24 26 28 30 32 34 36 38 5 20 35 50 65 80 95 110 125 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) idd ip3
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 2700 mhz [1] -10 -5 0 5 10 15 20 25 30 35 -20 -17 -14 -11 -8 -5 -2 1 4 7 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz -10 -5 0 5 10 15 20 25 30 -20 -15 -10 -5 0 5 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) power compression @ 2700 mhz [2] power compression @ 2300 mhz [1] -10 -5 0 5 10 15 20 25 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -10 -5 0 5 10 15 20 25 -20 -17 -14 -11 -8 -5 -2 1 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) power compression @ 2300 mhz [2] [1] vdd = 5v, r bias = 2k [2] vdd = 3v, r bias = 47k [3] r bias = 2k for vdd = 5v, r bias = 47k for vdd = 3v gain, power & noise figure vs. supply voltage @ 2300 mhz [3] gain, power & noise figure vs. supply voltage @ 2700 mhz [3] 12 14 16 18 20 22 0.8 0.9 1 1.1 1.2 1.3 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) 8 10 12 14 16 18 20 22 24 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz output ip3 vs. rbias @ 2700 mhz 23 26 29 32 35 38 100 1000 10000 100000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm) 8 10 12 14 16 18 20 0.8 0.9 1 1.1 1.2 1.3 1.4 100 1000 10000 100000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms) gain, noise figure & rbias @ 2700 mhz output ip3 vs. rbias @ 2300 mhz 20 23 26 29 32 35 100 1000 10000 100000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm) 10 12 14 16 18 20 22 0.8 0.85 0.9 0.95 1 1.05 1.1 100 1000 10000 100000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms) gain, noise figure & rbias @ 2300 mhz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings drain bias voltage (vdd) +5.5v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 11.1 m w /c above 85 c) 0.72 w thermal r esistance (channel to ground paddle) 90 c/w s torage temperature -65 to +150 c o perating temperature -40 to +85 c esd s ensitivity (hbm) class 1a ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) idd (ma) 2.7 35 3.0 47 3.3 57 4.5 80 5.0 95 5.5 110 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. supply voltage (rbias = 2k for vdd = 5v, rbias = 47k for vdd = 3v ) vdd (v) rbias (ohms) idd (ma) min max r ecommended 3v 1.8k [1] o pen circuit 2k 28 5.6k 40 47k 47 5v 0 o pen circuit 270 61 820 81 2k 95 [1] w ith vdd= 3v and r bias < 1.8k o hms may result in the part becoming conditionally stable which is not recommended. absolute bias resistor range & recommended bias resistor values HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c715 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 715 xxxx h m c715 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 715 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin number f unction description i nterface schematic 1, 3 - 7, 9, 10, 12 - 14, 16 n/c no connection required. these pins may be connected to rf /dc ground without affecting performance. 2 rfin this pin is dc coupled. see application circuit for off chip component. 11 rfout this pin is dc coupled. see application circuit for off chip component. 8 res this pin is used to set the dc current of the amplifer by selection of external bias resistor. s ee application circuit. 15 vdd p ower supply voltage. bypass capacitors are required. s ee application circuit. gnd ground paddle must be connected to rf /dc ground. pin descriptions HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb i tem description j1, j2 p cb m ount sm a rf connector j3, j4 dc p in c1 100p f capacitor, 0402 p kg. c2 1000 p f capacitor, 0603 p kg. c3 0.47 f capacitor, 0603 p kg. c4 68p f capacitor, 0402 p kg. c5 3.3p f capacitor, 0402 p kg. r 1 2k r esistor, 0402 p kg. u1 h m c715 lp 3( e ) amplifer p cb [2] 122490 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350. or arlon 25 r list of materials for evaluation pcb 122492 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. HMC715LP3 / 715lp3e v01.0808 gaas phemt mmic low noise amplifier, 2.1 - 2.9 ghz
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