raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 1 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information description u 4 mil substrate u conversion loss 10 db (typ.) u no dc bias required u chip size 1.5 mm x 2.5 mm features the RMWW12001 is a 12 to 24 ghz doubler designed to be used in the lo chain of point to point radios, point to multi-point communications, lmds, and other millimeter wave applications. in conjunction with other raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 ghz transmit/receive chipset. the RMWW12001 utilizes raytheons 0.25 m power phemt process and is sufficiently versatile to serve in a variety of multiplier applications. RMWW12001 12-24 ghz doubler mmic electrical characteristics (at 25oc), 50 ? system, pin=+18 dbm parameter min typ max unit input frequency range 8.5 12 ghz output frequency range 17 24 ghz input drive power +16 +18 dbm conversion loss 10 12.5 db conversion loss variation vs. frequency 2 db parameter min typ max unit fundamental rejection -20 dbc 3rd harmonic rejection -25 dbc 4th harmonic rejection -25 dbc 5th harmonic rejection -35 dbc input return loss (pin = +18 dbm) 12 db absolute maximum ratings parameter symbol value units rf input power (from 50 ? source) p in +22 dbm operating baseplate temperature t c -30 to +85 c storage temperature range t stg -55 to +125 c caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325c for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012 long corresponding to a typically 2 mil between the chip and the substrate material. application information step 1: the RMWW12001 does not require dc bias. apply rf input signal at the appropriate frequency band and input drive level. step 2: follow turn-off sequence of: turn off rf input power. recommended procedure for operation the following sequence of steps must be followed to properly test the amplifier:
raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 2 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information figure 2 chip layout and bond pad locations chip size is 1.5 mm x 2.5 mm 100 m. back of chip is rf ground dimensions in mm 0.0 0.0 0.0 0.0 1.5 1.5 2.5 2.5 2.345 2.2025 1.4035 1.56 1.7165 mmic chip rf out rf in ground (back of chip) x2 figure 1 functional block diagram RMWW12001 12-24 ghz doubler mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 3 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 8 9 10 11 12 13 input frequency (ghz) conversion loss (db) pin=+16dbm pin=+18dbm pin=+20dbm typical performance, chip bonded into 50 ohm test fixture performance data figure 3 recommended assembly diagram rf input rf output 5mil thick alumina 50-ohm 5 mil thick alumina 50-ohm 2 mil gap l< 0.015 (4 places) die-attach 80au/20sn note: use 0.003 by 0.0005 gold ribbon for bonding. rf input and output bonds should be less than 0.015 long with stress relie f. RMWW12001 12-24 ghz doubler mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 4 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information performance data (contd) -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 8 9 10 11 12 13 input frequency (ghz) fundamental rejection (dbc) pin=+16dbm pin=+18dbm pin=+20dbm -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 8 9 10 11 12 13 input frequency (ghz) 3rd harmonic rejection (dbc) pin=+16dbm pin=+18dbm pin=+20dbm typical performance, chip bonded into 50 ohm test fixture RMWW12001 12-24 ghz doubler mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 5 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information 0.00 5.00 10.00 15.00 20.00 25.00 30.00 8 9 10 11 12 13 input frequency (ghz) return loss (db) pin=+16dbm pin=+18dbm pin=+20dbm -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 8 9 10 11 12 13 input frequency (ghz) 4th harmonic rejection (dbc) pin=+16dbm pin=+18dbm pin=+20dbm performance data (contd) typical performance, chip bonded into 50 ohm test fixture RMWW12001 12-24 ghz doubler mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 2, 2001 page 6 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information d&l technical sales 6139 s. rural road, #102 tempe, az 85283 480-730-9553 fax: 480-730-9647 nicholas delvecchio, jr. dlarizona@aol.com hi-peak technical sales p.o. box 6067 amherst, nh 03031 866-230-5453 fax: 603-672-9228 sales@hiCpeak.com north america spartech south 2115 palm bay road, ne, suite 4 palm bay, fl 32904 321-727-8045 fax: 321-727-8086 jim morris jim@spartech-south.com teq sales, inc. 920 davis road, suite 304 elgin, il 60123 847-742-3767 fax: 847-742-3947 dennis culpepper dculpepper@teqsales.com cantec representatives 8 strathearn ave, no. 18 brampton, ontario canada l6t 4l9 905-791-5922 fax: 905-791-7940 dave batten cantec-ott@cantec-o.net sangus oy lunkintie 21, 90460 oulunsalo finland 358-8-8251-100 fax: 358-8-8251-110 juha virtala juha.virtala@sangus.fi itx corporation 2C5, kasumigaseki 3Cchome chiyodaCku tokyo 100-6014 japan 81-3-4288-7073 fax: 81-3-4288-7243 maekawa ryosuke maekawa.ryosuke@ itxCcorp.co.jp mti engineering ltd. afek industrial park hamelacha 11 new industrial area rosh hayin 48091 israel 972-3-902-5555 fax: 972-3-902-5556 adi peleg adi_p@mti-group.co.il sirces srl via c. boncompagni, 3b 20139 milano italy 3902-57404785 fax: 3902-57409243 nicola iacovino nicola.iacovino@sirces.it sea union 9f-1, building a, no 19-3 san-chung road nankang software park taiwan, roc taipei 115 02-2655-3989 fax: 02-2655-3918 murphy su murphy@seaunionweb.com.tw globes elektronik & co . klarastrabe 12 74072 heilbronn germany 49-7131-7810-0 fax: 49-7131-7810-20 ulrich blievernicht hfwelt@globes.de headquarters 6321 san ignacio drive san jose, ca 95119 408-360-4073 fax: 408-281-8802 art herbig art.herbig@avnet.com belgium and luxembourg cipalstraat 2440 geel belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com united states (east coast) raytheon 362 lowell street andover, ma 01810 978-684-8628 fax: 978-684-8646 walter shelmet wshelmet@ rrfc.raytheon.com sales office headquarters 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com customer support europe raytheon am teckenberg 53 40883 ratingen germany 49-2102-706-155 fax: 49-2102-706-156 peter hales peter_j_hales@ raytheon.com asia raytheon room 601, gook je ctr. bldg 191 hangang ro 2-ga yongsan-gu, seoul, korea 140-702 82-2-796-5797 fax: 82-2-796-5790 t.g. lee tg_lee@ rrfc.raytheon.com united states (west coast) raytheon 362 lowell street andover, ma 01810 978-684-8919 fax: 978-684-8646 rob sinclair robert_w_sinclair@ rrfc.raytheon.com united kingdom burnt ash road aylesford, kent england me207xb 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com france 4 allee du cantal evry, cedex france 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com holland chr. huygensweg 17 2400 aj alphen aan den rijn the netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com spain c/isobel colbrand, 6 C 4a 28050 madrid spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com europe asia steward technology 6990 village pkwy #206 dublin, ca 94568 925-833-7978 fax: 925-560-6522 john steward johnsteward1@msn.com sangus ab berghamnvagen 68 box 5004 sC165 10 hasselby sweden ronny gustafson 468-0-380210 fax: 468-0-3720954 worldwide distribution worldwide sales representatives
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