unisonic technologies co., ltd ut8205az preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-886.b n-channel enhancement mode ? description the ut8205az uses advanced technology to provide fast switching, low on-resistance and co st-effectiveness. this device is suitable for all commercial-industri al surface mount applications. ? features * r ds(on) 28m ? @ v gs = 4.5v * ultra low gate charge ( typical 23 nc ) * low reverse transfer capacitance ( c rss = typical 150 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen-free 1 2 3 4 5 6 7 8 UT8205AZL-AG6-R ut8205azg-ag6-r sot-26 s1 d s2 g2 d g1 - - tape reel ut8205azl-s08-r ut8205azg-s08-r sop-8 d s1 s1 g1 g2 s2 s2 d tape reel ut8205azl-p08-r ut8205azg-p08-r tssop-8 d s1 s1 g1 g2 s2 s2 d tape reel ? marking for sot-26
ut8205az preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-886.b ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 2) continuous i d 6 a pulsed i dm 20 a power dissipation (t a =25c) (note 3) sot-26 p d 1.14 w sop-8 1.6 w tssop-8 1 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. 2. pulse test : pulse width 300 s, duty cycle 2% 3. pulse width limited by t j ( max ) ? thermal data parameter symbol min typ max unit junction to ambient (note) sot-26 ja 110 c/w sop-8 78 c/w tssop-8 125 c/w note: pulse test : pulse width 300 s, duty cycle 2% ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v breakdown voltage temperature coefficient bv dss t j i d =1ma, reference to 25c 0.03 v/c drain-source leakage current i dss v ds =20v, v gs =0v, 1 a gate-source leakage current i gss v gs =8v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 0.5 1.5 v drain-source on-state resistance (note) r ds(on) v gs =4.5v, i d =6.0a 28 m ? v gs =2.5v, i d =5.2a 38 m ? dynamic parameters input capacitance c iss v ds =20v, v gs =0v, f=1.0mhz 1035 pf output capacitance c oss 320 pf reverse transfer capacitance c rss 150 pf switching parameters turn-on delay time (note) t d ( on ) v gs =5v, v ds =10v, r d =10 ? , r g =6 ? , i d =1a 30 ns turn-on rise time t r 70 ns turn-off delay time t d ( off ) 40 ns turn-off fall-time t f 65 ns total gate charge(note) q g v ds =20v, v gs =5v, i d =6.0a 23 nc gate source charge q gs 4.5 nc gate drain charge q gd 7 nc source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =1.7a, v gs =0v 1.2 v diode continuous forward current i s v d =v g , v s =1.3v 1.54 a note: surface mounted on 1 in 2 copper pad of fr4 board.
ut8205az preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-886.b
|
