unisonic technologies co., ltd 2n70zl power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502.765.a 2 a , 700v n-channel power mosfet ? description the utc 2n70zl is a high voltage mosfet designed to have better characteristics, such as fa st switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 6.3 ? @ v gs = 10v * ultra low gate charge (typical 8.1nc) * low reverse transfer capacitance (c rss = typical 5.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n70zll-tm3-t 2N70ZLG-TM3-T to-251 g d s tube note: pin assignment: g: gate d: drain s: source
2n70zl power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-765.a ? absolute maximum ratings ( t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 2.0 a drain current continuous i d 2.0 a pulsed (note 2) i dm 8.0 a avalanche energy single pulsed (note 3) e as 140 mj repetitive (note 2) e ar 2.8 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 30 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l=45mh, i as =2.0a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 2.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 110 /w junction to case jc 4.24 /w ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 700 v drain-source leakage current i dss v ds = 700v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss /t j i d = 250 a, referenced to 25c 0.4 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d =1a 5.0 6.3 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f =1mhz 270 350 pf output capacitance c oss 38 50 pf reverse transfer capacitance c rss 5 7 pf
2n70zl power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-765.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit switching characteristics turn-on delay time t d ( on ) v dd =350v, i d =2.0a, r g =25 ? (note 1, 2) 30 ns turn-on rise time t r 80 ns turn-off delay time t d ( off ) 50 ns turn-off fall time t f 70 ns total gate charge q g v ds =560v, v gs =10v, i d =2.0a (note 1, 2) 8.1 11 nc gate-source charge q gs 1.7 nc gate-drain charge q gd 4.4 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0 v, i sd = 2.0 a 1.4 v continuous drain-source current i sd 2.0a pulsed drain-source current i sm 8.0 a reverse recovery time t rr v gs = 0 v, i sd = 2.0a di/dt = 100 a/ s (note1) 260 ns reverse recovery charge q rr 1.09 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
2n70zl power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-765.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
2n70zl power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-765.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform dd dss dss 2 as as v - bv bv li 2 1 = e fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
2n70zl power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-765.a ? typical characteristics drain current, i d ( a) drain current, i d ( a) drain current, i d (a) drain current, i d (ma) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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