ne688m03 npn silicon transistor ? new m03 package: ? smallest transistor outline package available ? low profile/0.59 mm package height ? flat lead style for better rf performance ? high gain bandwidth product: f t = 9.5 ghz ? low noise figure: nf = 1.7 db at 2 ghz ? high collector current: i cmax = 100 ma features outline dimensions (units in mm) package outline m03 preliminary data sheet part number ne688m03 eiaj 1 registered number 2SC5437 package outline m03 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 1 v, i c = 3 ma, f = 2 ghz ghz 4 5 v ce = 3 v, i c = 20 ma, f = 2 ghz ghz 9.5 nf noise figure at v ce = 1 v, i c = 3 ma, f = 2 ghz db 1.9 2.5 v ce = 3 v, i c = 7 ma, f = 2 ghz db 1.7 |s 21e | 2 insertion power gain at v ce = 1 v, i c = 3 ma, f = 2 ghz db 3 4 v ce = 3 v, i c = 20 ma, f = 2 ghz db 8 h fe 2 forward current gain at v ce = 1 v, i c = 3 ma 80 145 i cbo collector cutoff current at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 c re 3 feedback capacitance at v cb = 1 v, i e = 0, f = 1 mhz pf 0.7 0.8 electrical characteristics (t a = 25 c) pin connections 1. emitter 2. base 3. collector california eastern laboratories ts notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. capacitance is measured with emitter and case connected to the guard terminal at the bridge. description the ne688m03 transistor is designed for low cost amplifier and oscillator applications. low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. nec's new low profile/flat lead style "m03" package is ideal for today's portable wireless applications. the ne688 is also available in chip and six different low cost plastic surface mount package styles. 1 3 2 1.20.05 0.80.1 +0.1 -0.05 0.15 1.4 0.1 (0.9) 0.590.05 0.20.1 0.45 0.45 0.30.1
parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps parameters 688m03 c cb 0.24e-12 c ce 0.27e-12 l b 0.5e-9 l e 0.6e-9 c cbpkg 0.08e-12 c cepkg 0.08e-12 l bx 0.12e-9 l cx 0.10e-9 l ex 0.12e-9 additional parameters units (1) gummel-poon model parameters q1 parameters q1 is 3.8e-16 mjc 0.48 bf 135.7 xcjc 0.56 nf 1 cjs 0 va f2 8 vjs 0.75 ikf 0.6 mjs 0 ise 3.8e-15 fc 0.75 ne 1.49 tf 11e-12 br 12.3 xtf 0.36 nr 1.1 vtf 0.65 va r 3.5 itf 0.61 ikr 0.06 ptf 50 isc 3.5e-16 tr 32e-12 nc 1.62 eg 1.11 re 0.4 xtb 0 rb 6.14 xti 3 rbm 3.5 kf 1.5e-14 irb 0.001 af 1.22 rc 4.2 cje 0.796e-12 vje 0.71 mje 0.38 cjc 0.549e-12 vjc 0.65 bjt nonlinear model parameters (1) model range frequency: 0.1 to 5.0 ghz bias: v ce = 0.5 v to 3 v, i c = 0.5 ma to 10 ma date: 11/98 schematic base c cbpkg c cb c ce l bx l b l e l ex l cx c cepkg emitter collector q1 nonlinear model ne688m03
note: 1. operation in excess of any one of these parameters may result in permanent damage. symbols parameters units ratings v cbo collector to base voltage v 9 v ceo collector to emitter voltage v 6 v ebo emitter to base voltage v 2 i c collector current ma 100 p t total power dissipation mw 125 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) ne688m03 collector to emmiter voltage, v ce (v) collector current, i c (ma) collector current vs. collector to emitter voltage typical performance curves (t a = 25 c) collector current, i c (ma) dc current gain, h fe d.c. current gain vs. colector current base to emmiter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage 30 25 20 15 10 5 0 0 2.5 5 7 200 a 180 a 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a 200 100 0 0.1 0.2 0.5 1 2510 20 50 100 v ce = 1 v v ce = 1 v 0 0.5 1 100 50 20 2 0.5 1 0.2 0.1 0.05 0.02 0.01 10 5 exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 06/10/2002 data subject to change without notice life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale.
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