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hexfet power mosfet notes through are on page 2 3mm x 3mm pqfn applications system/load switch features and benefits features benefits low thermal resistance to pcb (<6.0c/w) enable better thermal dissipation compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendlier msl1, consumer qualification increased reliability v ds -30 v r ds(on) max (@v gs = -10v) 14.6 m q g (typical) 32 nc i d (@t a = 25c) -11 a 6 5 7 8 d d d d 1 2 3 4 s s g s absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ -10v i d @ t c = 70c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. -11 -24 -90 25 -30 -9 -24 -55 to + 150 2.8 0.02 1.8

! form quantity irfhm9331trpbf pqfn 3mm x 3mm tape and reel 4000 irfhm9331tr2pbf pqfn 3mm x 3mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.904mh, r g = 50 , i as = -9a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. current limited by package. . g d s static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) ??? 10.0 ??? ??? 11.7 14.6 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v gs(th) gate threshold voltage coefficient ??? -5.1 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -10 gate-to-source reverse leakage ??? ??? 10 gfs forward transconductance 16 ??? ??? s q g total gate charge ??? 16 ??? nc v ds = -15v,v gs = -4.5v,i d = - 9.0a q g total gate charge ??? 32 48 q gs gate-to-source charge ??? 4.4 ??? q gd gate-to-drain charge ???8??? r g gate resistance ??? 16 ??? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 27 ??? t d(off) turn-off delay time ??? 72 ??? t f fall time ??? 60 ??? c iss input capacitance ??? 1543 ??? c oss output capacitance ??? 310 ??? c rss reverse transfer capacitance ??? 208 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 64 96 ns q rr reverse recovery charge ??? 25 38 nc thermal resistance parameter units r jc junction-to-case r ja junction-to-ambient r ja junction-to-ambient (t<10s) c/w conditions see figs. 19a & 19b max. 76 -9.0 ? = 1.0khz v gs = 0v v ds = -25v v ds = -24v, v gs = 0v conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -20v, i d = -11a v gs = -10v, i d = -11a v ds = v gs , i d = -25 a m a t j = 25c, i f = -2.8a, v dd = -24v di/dt = 100/ s t j = 25c, i s = -2.8a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = -9.0a r g = 6.8 v ds = -10v, i d = -9.0a v ds = -24v, v gs = 0v, t j = 125c v dd = -15v, v gs = -4.5v i d = -1.0a v ds = -15v v gs = -25v v gs = 25v v gs = -10v -90 a nc ns pf ??? typ. ??? typ. ??? ??? static drain-to-source on-resistance a ??? ??? ??? ??? -2.8 max. 6 30 45

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -11a v gs = -10v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v 60 s pulse width tj = 25c -2.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c -2.7v vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v 1.5 2 2.5 3 3.5 4 4.5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds= -6v i d = -9a
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.4 0.6 0.8 1.0 1.2 -v sd , source-to-drain voltage (v) 1.0 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec dc 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 - i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -25ua
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fig 14. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 15 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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for p-channel hexfet power mosfets 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.9a -2.9a bottom -9.0a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 p o w e r ( w ) 0 5 10 15 20 25 -v gs, gate -to -source voltage (v) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -11a t j = 25c t j = 125c 0 20 40 60 80 100 -i d , drain current (a) 0 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -10v vgs = -4.5v

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fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v ' ( 1 ) $
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f
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note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn package details pqfn part marking marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6
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pqfn tape and reel qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ms l 1 (per ipc/je de c j-s t d-020d ??? ) rohs compliant yes pqfn 3mm x 3mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? revision history 12/16/2013

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