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absolute maximum ratings parameter units i d @ v gs = -4.5v, t c = 25c continuous drain current -0.53 i d @ v gs = -4.5v, t c = 100c continuous drain current -0.33 i dm pulsed drain current -2.12 p d @ t c = 25c max. power dissipation 0.57 w linear derating factor 0.0045 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 33.5 mj i ar avalanche current -0.53 a e ar repetitive avalanche energy 0.06 mj dv/dt peak diode recovery dv/dt -4.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 43 (t ypical ) mg pre-irradiation o c a www.irf.com 1 for footnotes refer to the last page international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed complimentary n-channel available - irhlub770z4, irhlubc770z4 radiation hardened logic level power mosfet surface mount (ub) and (ubc) 60v, p-channel ub (metal lid) technology ubc (ceramic lid) 2n7626ub irhlub7970z4 2n7626ubc irhlubc7970z4 product summary part number radiation level r ds(on) i d irhlub7970z4 irhlubc7970z4 IRHLUB7930Z4 irhlubc7930z4 100k rads (si) 300k rads (si) 1.40 ? - 0.53a 1.40 ? -0.53a pd-94764k
irhlub7970z4, 2n7626ub pre-irradiation irhlubc7970z4, 2n7626ubc 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -0.53 i sm pulse source current (body diode) ? ? -2.12 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -0.53a, v gs = 0v t rr reverse recovery time ? ? 50 ns t j = 25c, i f = -0.53a, di/dt -100a/ s q rr reverse recovery charge ? ? 25 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thja junction-to-ambient ? ? 220 c/w note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown ? -0.055 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.40 ? v gs = -4.5v, i d = -0.33a resistance v gs(th) gate threshold voltage -1.0 ? -2.0 v v ds = v gs , i d = -250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? 3.1 ? mv/c g fs forward transconductance 0.8 ? ? s v ds = -10v, i ds = -0.33a i dss zero gate voltage drain current ? ? -1.0 v ds = -48v ,v gs = 0v ? ? -10 v ds = -48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -10v i gss gate-to-source leakage reverse ? ? 100 v gs = 10v q g total gate charge ? ? 3.6 v gs = -4.5v, i d = -0.53a q gs gate-to-source charge ? ? 1.5 nc v ds = -30v q gd gate-to-drain (?miller?) charge ? ? 1.8 t d (on) turn-on delay time ? ? 22 v dd = -30v, i d = -0.53a, t r rise time ? ? 22 v gs = -5.0v, r g = 7.5 ? t d (off) turn-off delay time ? ? 27 t f fall time ? ? 27 l s + l d total inductance ? 8.4 ? ciss input capacitance ? 167 ? v gs = 0v, v ds = -25v c oss output capacitance ? 43 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 10 ? na nh ns a measured from the center of drain pad to center of source pad r g gate resistance 56 ? f = 1.0mhz, open drain
www.irf.com 3 pre-irradiation irhlub7970z4, 2n7626ub irhlubc7970z4, 2n7626ubc international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. typical single event effect, safe operating area for footnotes refer to the last page -70 -60 -50 -40 -30 -20 -10 0 024681012 vgs vds br i au table 1. electrical characteristics @ tj = 25c, post total dose irradiation 1. part numbers irhlub7970z4, IRHLUB7930Z4 and irhlubc7970z4, irhlubc7930z4 parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage -60 ? v v gs = 0v, i d = -250a v gs(th) gate threshold voltage -1.0 -2.0 v v gs = v ds , i d = -250a i gss gate-to-source leakage forward ? -100 v gs = -10v i gss gate-to-source leakage reverse ? 100 v gs = 10v i dss zero gate voltage drain current ? -1.0 av ds = -48v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-39) ? 1.36 ? v gs = -4.5v, i d = -0.33a r ds(on) static drain-to-source on-state ? 1.40 ? v gs = -4.5v, i d = -0.33a resistance (ub and ubc) vsd diode forward voltage ? -5.0 v v gs = 0v, i d = -0.53a na radiation characteristics table 2. typical single event effect safe operating area ion let energy range vds (v) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v 2v 4v 5v 6v 7v 8v 10v br 37 285 36.8 -60 -60 -60 -60 -60 -50 -35 -25 i 60 345 32.7 -60 -60 -60 -60 -60 -20 - - au 82 357 28.5 -60 -60 -60 -60 - - - -
irhlub7970z4, 2n7626ub pre-irradiation irhlubc7970z4, 2n7626ubc 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -4.5v i d = -0.53a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c - 2.25v vgs top -10v -5.0v -4.5v -3.5v -3.0v -2.75v -2.50v bottom -2.25v 1.5 2.0 2.5 3.0 3.5 4.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 60 s pulse width t j = 150c t j = 25c 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c - 2.25v vgs top -10v -5.0v -4.5v -3.5v -3.0v -2.75v -2.50v bottom -2.25v
www.irf.com 5 pre-irradiation irhlub7970z4, 2n7626ub irhlubc7970z4, 2n7626ubc fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 55 60 65 70 75 - v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = -1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -50a i d = -250a i d = -1.0ma i d = -150ma 2 3 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -0.53a t j = 25c t j = 150c 0 0.5 1.0 1.5 2.0 2.5 -i d , drain current (a) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = -4.5v
irhlub7970z4, 2n7626ub pre-irradiation irhlubc7970z4, 2n7626ubc 6 www.irf.com
typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 012345 -v sd , source-to-drain voltage (v) 0.01 0.1 1 10 - i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c 1 10 100 0 50 100 150 200 250 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 1 2 3 4 5 6 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.53a v = -12v ds v = -30v ds v = -48v ds 25 50 75 100 125 150 0.0 0.1 0.2 0.4 0.5 0.6 t , case temperature ( c) -i , drain current (a) c d maximum drain current vs. case temperature
www.irf.com 7 pre-irradiation irhlub7970z4, 2n7626ub irhlubc7970z4, 2n7626ubc maximum safe operating area fig 14. maximum avalanche energy vs. drain current fig 11. maximum effective transient thermal impedance, junction-to-ambient 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -0.53a -0.34a bottom -0.24a 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s dc
irhlub7970z4, 2n7626ub pre-irradiation irhlubc7970z4, 2n7626ubc 8 www.irf.com

t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %
+ - v gs ! !
www.irf.com 9 pre-irradiation irhlub7970z4, 2n7626ub irhlubc7970z4, 2n7626ubc 1 = gate 2 = source 3 = drain 4 = shielding connected to the lid case outline and dimensions ? ubc (ceramic lid) 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 3x 0.355 [.014] min. 1.75 [.069] 1.40 [.055] 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimensions are shown in millimeters [inches]. 1. dimens ioning & t ole rancing per as me y14.5m-1994 2. cont r oll ing dime ns ion: inch. not e s : 4. hatched areas on package denote metalization areas. 4 pad assignments case outline and dimensions ? ub (metal lid) 4 3. dimens ions are s hown in millimet e rs [inche s ]. 1. dimens ioning & t ole rancing pe r as me y14.5m-1994 2. cont rolling dime ns ion: inch. not e s : 4. hatched areas on package denote metalization areas. 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 1.42 [.056] 1.17 [.046] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 pad assignments 1 = gate 2 = source 3 = drain 4 = shielding connected to the lid
irhlub7970z4, 2n7626ub pre-irradiation irhlubc7970z4, 2n7626ubc 10 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = - 25v, starting t j = 25c, l= 238mh peak i l = -0.53a, v gs = -10v i sd -0.53a, di/dt -100a/ s, v dd - 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2010

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