? semiconductor components industries, llc, 2008 january, 2008 - rev. 3 1 publication order number: NTB5605p/d NTB5605p, NTB5605 power mosfet -60 volt, -18.5 amp p-channel, d 2 pak features ? designed for low r ds(on) ? withstands high energy in avalanche and commutation modes ? pb-free packages are available applications ? power supplies ? pwm motor control ? converters ? power management maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain-to-source voltage v dss -60 v gate-to-source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d -18.5 a power dissipation (note 1) steady state t a = 25 c p d 88 w pulsed drain current t p = 10 s i dm -55 a operating junction and storage temperature t j , t stg -55 to 175 c single pulse drain-to-source avalanche energy (v dd = 25 v, v gs = 5.0 v, i pk = 15 a, l = 3.0 mh, r g = 25 ) e as 338 mj lead temperature for soldering purposes (1/8 in from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction-to-case (drain) C steady state r jc 1.7 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. when surface mounted to an fr4 board using 1 pad size (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using the minimum recommended pad size (cu area 0.41 in 2 ). http://onsemi.com 1 2 3 4 d 2 pak case 418b style 2 marking diagram & pin assignment x = p or blank a = assembly location y = year ww = work week g = pb-free package device package shipping ? ordering information NTB5605p d 2 pak 50 units/rail NTB5605pt4 d 2 pak 800 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NTB5605pg d 2 pak (pb-free) 50 units/rail NTB5605pt4g d 2 pak (pb-free) 800 tape & reel NTB5605xg ayww 1 gate 3 source 4 drain 2 drain -60 v 120 m @ -5.0 v i d max v (br)dss r ds(on) typ -18.5 a p-channel d s g NTB5605t4g d 2 pak (pb-free) 800 tape & reel
NTB5605p, NTB5605 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 a -60 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j -64 mv/ c zero gate voltage drain current i dss v gs = 0 v t j = 25 c -1.0 a v ds = -60 v t j = 125 c -10 gate-to-source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = -250 a -1.0 -1.5 -2.0 v drain-to-source on resistance r ds(on) v gs = -5.0 v, i d = -8.5 a v gs = -5.0 v, i d = -17 a 120 140 140 m forward transconductance g fs v ds = -10 v, i d = -8.5 a 12 s drain-to-source on voltage v ds(on) v gs = -5.0 v, i d = -8.5 a -1.3 v charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = -25 v 730 1190 pf output capacitance c oss 211 300 reverse transfer capacitance c rss 67 120 total gate charge q g(tot) v gs = -5.0 v, v ds = -48 v, i d = -17 a 13 22 nc gate-to-source charge q gs 4.0 gate-to-drain charge q gd 7.0 switching characteristics (note 4) turn-on delay time t d(on) v gs = -5.0 v, v dd = -30 v, i d = -17 a, r g = 9.1 12.5 25 ns rise time t r 122 183 turn-off delay time t d(off) 29 58 fall time t f 75 150 drain-source diode characteristics forward diode voltage v sd v gs = 0 v i s = -17 a t j = 25 c -1.55 -2.5 v t j = 125 c -1.4 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = -17 a 60 ns charge time t a 39 discharge time t b 21 reverse recovery charge q rr 0.14 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTB5605p, NTB5605 http://onsemi.com 3 40 30 20 10 0 0.25 0.175 0.075 0 -v ds , drain-to-source voltage (volts) -i d , drain current (amps) -v gs , gate-to-source voltage (volts) -i d , drain current (amps) -i d , drain current (amps) -i d , drain current (amps) r ds(on) , drain-to-source resistance ( ) r ds(on) , drain-to-source resistance ( ) t j , junction temperature ( c) -v ds , drain-to-source voltage (volts) r ds(on) , drain-to-source resistance (normalized) -i dss , leakage (na) 1.6 2 1.2 0.8 0 100 1 1000 10000 06 4 2 figure 1. on-region characteristics figure 2. transfer characteristics 0 0.5 0.15 0.1 25 20 15 0.05 0 10 30 figure 3. on-resistance vs. drain current and temperature figure 4. on-resistance vs. drain current and gate voltage figure 5. on-resistance variation with temperature figure 6. drain-to-source leakage current vs. voltage -50 50 25 0 -25 75 125 100 08 4 53040 20 10 50 60 40 30 20 10 0 18 12 6 024 150 0.4 810 6 v gs = -8 v v ds = -10 v t j = 25 c t j = -55 c t j = 125 c t j = 25 c t j = -55 c t j = 125 c v gs = -5.0 v v gs = -5.0 v v gs = 0 v t j = 150 c t j = 125 c i d = -8.5 a v gs = -5.0 v v gs = -9 v v gs = -7 v v gs = -5 v v gs = -4.5 v v gs = -4 v v gs = -3.5 v v gs = -3 v v gs = -10 v v gs = -10 v 35 25 15 5 t j = 25 c t j = 25 c 5 0.2 0.35 0.3 0.25 0.4 0.45 0.025 0.05 0.1 0.125 0.15 0.2 0.225 15 9 321 1.4 1.8 1 0.6 0.2 10 35 45 25 15 55 17 5 39 v gs = -5.5 v v gs = -6 v 8 2 1579 3
NTB5605p, NTB5605 http://onsemi.com 4 gate-to-source or drain-to-source voltage (volts) c, capacitance (pf) q g , total gate charge (nc) -v gs , gate-to-source voltage (volts) r g , gate resistance ( ) -v sd , source-to-drain voltage (volts) -i s , source current (amps) t, time (ns) -v ds , drain-to-source voltage (volts) t j , starting junction temperature ( c) -i d , drain current (amps) e as , single pulse drain-to-source avalanche energy (mj) 1000 100 10 1 0.1 1000 100 1 1 8 6 4 2 0 400 350 200 150 100 50 0 20 15 10 5 0 10 2400 10 2000 15 5 020 1600 1200 800 0 5 figure 7. capacitance variation figure 8. gate-to-source and drain-to-source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature 25 0 8 12 4 1 10 100 0 0.75 0.5 0.25 1.25 1.75 0.1 10 100 1 25 125 150 100 75 50 400 1 1.5 10 16 i d = -17 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = -20 v single pulse t c = 25 c v dd = -30 v i d = -17 a v gs = -5.0 v v gs = 0 v t j = 25 c i d = -15 a t r t d(off) t d(on) t f r ds(on) limit thermal limit package limit q t q ds q gs 10 ms 1 ms 100 s dc -v gs -v ds v ds 10 s 300 250 2200 1800 1400 1000 600 200 -v ds , drain-to-source voltage (volts) 3 5 7 60 45 30 15 0
NTB5605p, NTB5605 http://onsemi.com 5 t, time (s) 1 0.1 110 0.1 0.01 0.0001 figure 13. thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b r(t), effective transient thermal resistance (normalized) 0.001 d = 0.5 0.2 0.1 0.05 0.01 single pulse
NTB5605p, NTB5605 http://onsemi.com 6 package dimensions d 2 pak case 418b-04 issue j style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d -t- m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 -b- m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b-01 thru 418b-03 obsolete, new standard 418b-04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w-w view w-w view w-w 123 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
NTB5605p, NTB5605 http://onsemi.com 7 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTB5605p/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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