these si pin photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise an d low cross-talk. custom-designed devices (with different element shapes, number of elements, characteristics and packages) are also available to meet your specific needs. feel free to contact our sales office. photodiode si pin photodiode quadrant photodiode / plastic package features l clear plastic package (4 4.8 mm) l high sensitivity l uniform element characteristic l low cross-talk l low noise applications l signal readout for cd, dvd and mo (magneto optical) disc l laser beam alignment l position detection, etc. s7379-01 , S6695-01 , s6058 1 general ratings / absolute maximum ratings absolute maximum ratings active area elements gap reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline (mm) (m) (v) (c) (c) s7379-01 ? 1.0/4 element 20 S6695-01 ? 2.0 2.0/4 element 15 s6058 ? 0.6 1.2/4 element 10 20 -25 to +85 -40 to +100 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted, per 1 element) spectral response range peak sensitivity wavelength p photo sensitivity s = p dark current i d all elements temp. coefficient of i d t cid cut-off frequency fc r l =50 ? =830 nm terminal capacitance ct f=1 mhz nep type no. (nm) (nm) (a/w) typ. (na) max. (na) (times/c) (mhz) (pf) (w/hz 1/2 ) s7379-01 0.55 0.04 * 1 0.2 * 1 80 * 1 1 * 1 6.5 10 -15 * 1 S6695-01 320 to 1060 900 0.65 0.1 * 2 2 * 2 40 * 2 3 * 2 8.7 10 -15 * 2 s6058 320 to 1000 800 0.55 0.04 * 3 0.2 * 3 1.15 150 * 3 1 * 3 6.5 10 -15 * 3 *1: v r =10 v *2: v r =5 v *3: v r =3 v
si pin photodiode s7379-01, S6695-01, s6058 wavelength (nm) (typ. ta=25 ?c) photo sensitivity (a/w) 200 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 s7379-01 s6058 S6695-01 qe=100 % wavelength (nm) (typ. ) temperature coefficient (%/ ? c) 200 -0.5 +1.5 +1.0 +0.5 0 400 600 800 1000 s7379-01, S6695-01 s6058 reverse voltage (v) (typ. ta=25 ? c) dark current 0.01 100 fa 1 na 100 pa 10 pa 1 pa 0.1 1 10 100 s6058 S6695-01 s7379-01 reverse voltage (v) (typ. ta=25 ? c, f=1 mhz) terminal capacitance 0.1 100 ff 100 pf 10 pf 1 pf 1 10 100 s6058 S6695-01 s7379-01 spectral response kmpdb0145eb photo sensitivity temperature characteristics kmpdb0146eb dark current vs. reverse voltage kmpdb0147eb terminal capacitance vs. reverse voltage kmpdb0148eb 2
si pin photodiode s7379-01, S6695-01, s6058 1.27 electrode 1.27 d a c b 4.1 0.2 (including burr) 4.0 * 1.5 0.4 1.5 0.4 (2 ) 10 ? 0.8 1.8 (2 ) 5 ? photosensitive surface 5.0 0.2 (including burr) 4.7 * 4.8 * (2 ) 5 ? (2 ) 10 ? 0.5 anode a cathode common anode b anode c cathode common anode d 2.0 2.0 bc ad 0.015 0.25 0.7 0.3 0.7 0.3 7.0 0.3 0.1 0.1 0.5 0.015 details of photodiode chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1) kmpda0121ea nc anode a anode b cathode common nc anode c anode d cathode common ad bc 0.02 0.02 1.0 details of photodiode chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? 1.27 active area 1.27 1.27 4.1 0.2 (including burr) 4.0 * 3.4 0.4 3.4 0.4 (1.25) (1.25) (0.8) (0.8) (2 ) 10 ? 0.8 0.25 1.8 (2 ) 5 ? 10.8 0.3 5.0 0.2 (including burr) 4.7 * 4.8 * (2 ) 5 ? (2 ) 10 ? 0.5 0.4 photosensitive surface a b d c 0.3 max 0.3 max kmpda0137ea ? S6695-01 ? s7379-01 3
si pin photodiode s7379-01, S6695-01, s6058 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, hamamatsu city, 435-8558 japan, telephone: (81) 053-434-3311, fax: (81) 053-434-5184, http://www.hamamatsu.c om u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 8, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telepho ne: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. cat. no. kmpd1053e06 mar. 2004 dn 1.27 active area 1.27 1.27 4.1 0.2 (including burr) 4.0 * 3.4 0.4 3.4 0.4 (1.25) (1.25) (0.8) (0.8) (2 ) 10 ? 0.8 0.25 1.8 (2 ) 5 ? 10.8 0.3 0.01 1.2 electrode 0.6 0.01 a c b d 5.0 0.2 (including burr) 4.7 * 4.8 * (2 ) 5 ? (2 ) 10 ? 0.5 0.4 nc anode a anode b cathode common nc anode c anode d cathode common photosensitive surface details of photodiode chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? d a c b s6058 kmpda0007eb 4
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