2009. 4. 3 1/2 semiconductor technical data SMFB16 schottky barrier type diode revision no : 0 switching type power supply applications. features ? for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application ? switching power supply. ? reversed battery connection protection. ? dc/dc converter. ? cellular phones. maximum rating (ta=25 ? ) + _ + _ + _ + _ + _ + _ smf dim millimeters a b a b c d e f g 2.6 0.05 3.5 0.1 0.9 0.05 1.6 0.05 0.65 0.05 + _ 0.11 0.05 0 ~ 0.1 d e e f 0.98 0.05 h 1 2 c g h 1. anode 2. cathode electrical characteristics (ta=25 ? ) marking s16 type name lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =1.0a - 0.49 0.55 v repetitive peak reverse current i rrm v rrm =rated - 7 50 ? total capacitance c t v r =10v, f=1mhz - 40 - pf thermal resistance r th(j-1) junction to lead - - 20 ? /w r th(j-a) junction to ambient (on a grass-epoxy board) - - 140 characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 60 v average output rectitifed current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 30 a junction temperature t j -65 ?- 150 ? storage temperature range t stg -65 ?- 150 ?
2009. 4. 3 2/2 SMFB16 revision no : 0 i - v ff f forward voltage v (v) f forward current i (a) number of cycles peak surge forward current i (a) 1 0 40 20 80 60 100 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz 00.20.40.6 1 0.001 0.01 0.1 t a = 25 c t a = 125 c t a = -25 c
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