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this is information on a product in full production. december 2012 doc id 022864 rev 2 1/25 25 stb11n65m5, std11n65m5, stf11n65m5, STP11N65M5, stu11n65m5 n-channel 650 v, 0.43 typ., 9 a mdmesh? v power mosfet in d 2 pak, dpak, to-220fp, to-220 and ipak packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d stb11n65m5 710 v < 0.48 9 a std11n65m5 stf11n65m5 STP11N65M5 stu11n65m5 d 2 pak to-220 to-220fp dpak 1 3 2 tab 1 2 3 1 2 3 tab 1 3 tab 2 3 2 1 ipak !-v $4!" ' 3 table 1. device summary order codes marking package packaging stb11n65m5 11n65m5 d 2 pa k tape and reel std11n65m5 dpak stf11n65m5 to-220fp tu b e STP11N65M5 to-220 stu11n65m5 ipak www.st.com
contents stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 2/25 doc id 022864 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 electrical ratings doc id 022864 rev 2 3/25 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak dpak to-220 ipak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 9 9 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 5.6 5.6 (1) a i dm (1) drain current (pulsed) 36 36 (1) a p tot total dissipation at t c = 25 c 85 25 w dv/dt (2) 2. i sd 9 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pa k d pa k to - 2 2 0f p to - 2 20 i pa k r thj-case thermal resistance junction-case max 1.47 5.0 1.47 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 30 50 c/w r thj-amb thermal resistance junction- ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 2a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 130 mj
electrical characteristics stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 4/25 doc id 022864 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a 0.43 0.48 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 644 18 2.5 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -55-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -17-pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 4.5 a, v gs = 10 v (see figure 20 ) - 17 4.6 8.5 - nc nc nc
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 electrical characteristics doc id 022864 rev 2 5/25 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 7.5 a, r g = 4.7 , v gs = 10 v (see figure 21 and figure 24 ) - 23 10 13.5 13 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 9 36 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 9 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 21 ) - 232 2 17.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 21 ) - 328 2.8 17 ns c a
electrical characteristics stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 6/25 doc id 022864 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance dpak and ipak i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 10 s tj=150c tc=25c s ingle p u l s e 1m s 0.01 100 100 s am15 3 9 8 v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 10 s tj=150c tc=25c s ingle p u l s e 1m s 0.01 100 100 s am15 3 99v1 figure 6. safe operating area for to-220 and d 2 pa k figure 7. thermal impedance for to-220 and d 2 pak i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 10 s tj=150c tc=25c s ingle p u l s e 1m s 0.01 100 100 s am15400v1
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 electrical characteristics doc id 022864 rev 2 7/25 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 5 v d s (v) 15 (a) 10 8 6v 7v v g s =10v 20 8 v 25 16 14 12 10 am15401v1 i d 8 6 2 0 3 6 v g s (v) (a) 4 4 5 v d s =25v 7 8 9 10 12 14 16 am15402v1 v g s 6 4 2 0 0 5 q g (nc) (v) 8 10 15 10 v dd =520v i d =4.5a 20 12 3 00 200 100 0 400 500 v d s (v) am1540 3 v1 r d s (on) 0.4 0. 3 5 0. 3 0.25 0 2 i d (a) ( ) 1 0.45 0.5 v g s =10v 3 4 5 6 7 8 0.55 am15404v1 c 100 1 0.1 1 v d s (v) (pf) 10 ci ss co ss cr ss 10 100 1000 am15405v1 e o ss 1 0.5 0 0 v d s (v) ( j) 400 1.5 200 2 2.5 600 3 3 .5 am15406v1
electrical characteristics stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 8/25 doc id 022864 rev 2 figure 14. normalized on-resistance vs temperature figure 15. normalized gate threshold voltage vs temperature r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 4.5 a v g s = 10 v am05460v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v1 figure 16. drain-source diode forward characteristics figure 17. normalized b vdss vs temperature v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 figure 18. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =6a v dd =400v eon eoff 60 v g s =10v 8 0 100 5 15 25 3 5 45 am15407v1
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 test circuits doc id 022864 rev 2 9/25 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 10/25 doc id 022864 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 package mechanical data doc id 022864 rev 2 11/25 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 12/25 doc id 022864 rev 2 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 package mechanical data doc id 022864 rev 2 13/25 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 14/25 doc id 022864 rev 2 figure 27. dpak (to-252) drawing figure 28. dpak footprint (b) b. all dimensions are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 package mechanical data doc id 022864 rev 2 15/25 table 11. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 16/25 doc id 022864 rev 2 figure 29. to-220fp drawing 7012510_rev_k_b
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 package mechanical data doc id 022864 rev 2 17/25 table 12. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 18/25 doc id 022864 rev 2 figure 30. to-220 type a drawing 00159 88 _typea_rev_ s
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 package mechanical data doc id 022864 rev 2 19/25 table 13. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
package mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 20/25 doc id 022864 rev 2 figure 31. ipak (to-251) drawing 006 8 771_j
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 packaging mechanical data doc id 022864 rev 2 21/25 5 packaging mechanical data table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 22/25 doc id 022864 rev 2 table 15. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 packaging mechanical data doc id 022864 rev 2 23/25 figure 32. tape figure 33. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 24/25 doc id 022864 rev 2 6 revision history table 16. document revision history date revision changes 23-feb-2012 1 first release. 03-dec-2012 2 ? minor text changes in cover page ? added ipak packages ? added section 2.1: electrical characteristics (curves) ? updated section 5: packaging mechanical data ? modified: note 2 on ta bl e 2 ? updated: mechanical data for to-220fp package
stb11n65m5, std11n65m5, stf11n 65m5, STP11N65M5, stu11n65m5 doc id 022864 rev 2 25/25 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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