symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17.4 30 50 60 r q jc 2.3 3 w t a =70c 1.3 power dissipation a t a =25c p dsm 2 repetitive avalanche energy l=0.3mh c 22 a mj junction and storage temperature range a p d c 50 25 -55 to 175 t c =100c avalanche current c 12 i d 20 23 50 pulsed drain current c power dissipation b t c =25c continuous drain current maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 40 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AOD488 n-channel enhancement mode field effect transistor features v ds (v) = 40v i d = 20 a (v gs = 10v) r ds(on) < 26 m w (v gs = 10v) r ds(on) < 39 m w (v gs = 4.5v) 100% uis tested! 100% rg tested! general description the AOD488 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, loa d switching and general purpose applications. -rohs compliant -halogen free* g ds to252dpak top view bottom view g s d g s d alpha & omega semiconductor, ltd. www.aosmd.com
AOD488 symbol min typ max units bv dss 40 45 v 1 t j =55c 5 i gss 0.1 ua v gs(th) 1 2.3 3 v i d(on) 50 a 21.5 26 t j =125c 34 41 31 39 m w g fs 25 s v sd 0.76 1 v i s 20 a c iss 404 500 pf c oss 95 pf c rss 37 pf r g 2.7 4 w q g (10v) 9.2 12 nc q g (4.5v) 4.5 nc q gs 1.6 nc q gd 2.6 nc t d(on) 3.5 ns t r 6 ns t d(off) 13.2 ns t f 3.5 ns t rr 22.9 ns q rr 18.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =1.0 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =20v, i d =20a gate source charge gate drain charge total gate charge m w v gs =4.5v, i d =8a i s =1a, v gs =0v v ds =5v, i d =20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =32v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s v gs =0v, v ds =20v, f=1mhz switching parameters a: the value of r qja is measured with the device m ounted on 1in 2 fr-4 board with 2oz. copper, in a s till air environment with t a =25c. the power dissipation p dsm is based on r thja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation pd is based on tj(max)=175 c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature tj(max)=175c. d. the r qja is the sum of the thermal impedence fr om junction to case r qjc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of tj(max)=175c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta=25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1st 2008). rev3: july 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AOD488 typical electrical and thermal characteristics 500 150 60 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =8a v gs =10v i d =20a 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 4.5v 8v 5v alpha & omega semiconductor, ltd. www.aosmd.com
AOD488 typical electrical and thermal characteristics 500 150 60 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
AOD488 typical electrical and thermal characteristics 500 150 60 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 2 4 6 8 10 12 14 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD488 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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