switching diode fmn1 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) small mold type. (smd5) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge ma pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 0.9 v i f =5ma reverse current i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , if=5ma , rl=50 ? parameter capacitance between terminals reverse recovery time storage temperature ? 55 to ? 150 power dissipation 80 junction temperature 150 average rectified forward current (single) 25 surge current (t=1us) 250 reverse voltage (dc) 80 forward current (single) 80 parameter limits reverse voltage (repetitive) 80 smd5 0.8min. 1.0min. 0.45 0.35 1.9 0.95 0.95 0.45 0.35 0.6 2.4 3.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.0min 3.20.1 1.350.1 3.20.1 0.30.1 5.50.2 00.5 rohm : smd5 jeita : sc-74a week code 2.90.2 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 `??? 00.1 (5) (3) (1) (4) (2) 0.30.6 0.150.1 0.06 1.10.2 0.1 0.80.1 0.3 0.1 0.05 each lead has same dimension 1/2 2011.06 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
fmn11 0 1 2 3 4 5 6 7 8 9 10 1 10 100 0.1 1 10 100 t ifsm 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 100000 0 1020304050607080 ta=125 ta=-25 ta=25 ta=75 ta=150 0.1 1 10 0 5 10 15 20 f=1mhz 660 670 680 690 700 710 ave:682.7mv ta=25 if=5ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=70v n=10pcs ave:7.689na 0 1 2 3 4 5 6 7 8 9 10 ave:1.039pf ta=25 vr=6v f=1mhz n=10pcs 0 5 10 15 20 ave:2.50a 8.3ms ifsm 1cyc ave:1.26ns ta=25 vr=6v if=5ma rl=50 n=10pcs 0 1 2 3 4 5 110100 8.3ms ifsm 1cyc 8.3ms 0 1 2 3 4 5 6 7 8 9 10 ave:0.57kv c=200pf r=0 c=100pf r=1.5k ave:2.06kv 2/2 2011.06 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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