? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 65 v v dgr t j = 25 c to 150 c, r gs = 1m - 65 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 28 a i dm t c = 25 c, pulse width limited by t jm - 90 a i a t c = 25 c - 28 a e s t c = 25 c 200 mj p d t c = 25 c83w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3.0 g to-263 2.5 g ds99968b(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 65 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v - 3 a t j = 125 c -100 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 45 m trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTA28P065T ixtp28p065t v dss = - 65v i d25 = - 28a r ds(on) 45 m g = gate d = drain s = source tab = drain to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTA28P065T ixtp28p065t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 10 16 s c iss 2030 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 270 pf c rss 127 pf t d(on) 21 ns t r 29 ns t d(off) 36 ns t f 23 ns q g(on) 46 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 nc q gd 10 nc r thjc 1.5 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 28 a i sm repetitive, pulse width limited by t jm -112 a v sd i f = - 28a, v gs = 0v, note 1 -1.5 v t rr 31 ns q rm 34 nc i rm - 2.2 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = -14a, -di/dt = -100a/ s v r = - 33v, v gs = 0v pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline pins: 1 - gate 2,4 - drain 3 - source
? 2013 ixys corporation, all rights reserved IXTA28P065T ixtp28p065t fig. 1. output characteristics @ t j = 25oc -28 -24 -20 -16 -12 -8 -4 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 5 v - 6 v - 7 v - 8 v fig. 2. extended output characteristics @ t j = 25oc -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -28 -24 -20 -16 -12 -8 -4 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = -14a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 28a i d = -14a fig. 5. r ds(on) normalized to i d = -14a value vs. drain current 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -30 -25 -20 -15 -10 -5 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA28P065T ixtp28p065t fig. 7. input admittance -35 -30 -25 -20 -15 -10 -5 0 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -70 -60 -50 -40 -30 -20 -10 0 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = - 33v i d = -14a i g = -1ma fig. 11. capacitance 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms - - - -- - 100ms
? 2013 ixys corporation, all rights reserved IXTA28P065T ixtp28p065t fig. 14. resistive turn-on rise time vs. drain current 20 22 24 26 28 30 32 -28 -26 -24 -22 -20 -18 -16 -14 i d - amperes t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 33v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t r - nanoseconds 14 18 22 26 30 34 38 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 33v i d = - 28a, -14a fig. 16. resistive turn-off switching times vs. junction temperature 20 21 22 23 24 25 26 27 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 18 22 26 30 34 38 42 46 50 t d(off) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = - 33v i d = - 28a, -14a fig. 17. resistive turn-off switching times vs. drain current 20 24 28 32 36 40 44 -28 -26 -24 -22 -20 -18 -16 -14 i d - amperes t f - nanoseconds 18 20 22 24 26 28 30 t d(off) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = - 33v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 19 21 23 25 27 29 31 33 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 33v i d = -14a i d = - 28a fig. 18. resistive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 70 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t f - nanoseconds 15 20 25 30 35 40 45 50 55 60 65 70 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 33v i d = - 28a i d = -14a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA28P065T ixtp28p065t ixys ref: t_28p065t(a1)11-05-10-a fig. 19. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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