excelics EPA160A data sheet high efficiency heterojunction power fet +31.0dbm typical output power 8.5db typical power gain at 18ghz 0.3 x 1600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial heterojunction profile provides extra high power efficiency, and high reliability idss sorted in 40ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 29.0 31.0 31.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 9.5 11.5 8.5 db pae power added efficiency at 1db compression vds=8v, ids=50% idss f=12ghz 45 % idss saturated drain current vds=3v, vgs=0v 290 480 660 ma gm transconductance vds=3v, vgs=0v 320 500 ms vp pinch-off voltage vds=3v, ids=4.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.6ma -11 -15 v bvgs source breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 30 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -8v -3v ids drain current idss 475ma igsf forward gate current 80ma 14ma pin input power 28dbm @3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation 4.5w 3.8w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com chip thickness: 75 13 microns all dimensions in microns 50 50 48 100 95 40 840 340 116 80 gggg dddd sss ss
EPA160A data sheet high efficiency heterojunction po w er fet s- p arameters 8v, 1/2 idss fr e q --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- (ghz) m a g a ng m a g a n g m a g a ng m a g a ng 1.0 0.89 1 -118. 3 14.07 3 114. 9 0.02 8 32.7 0.34 4 -141.1 2.0 0.89 0 -146.2 7.91 2 96. 6 0.03 1 22.3 0.38 5 -156.6 3.0 0.88 9 -157.7 5.38 2 86. 8 0.03 1 20.5 0.40 1 -162.4 4.0 0.89 2 -163.6 4.09 3 79. 3 0.03 2 19.1 0.41 6 -164.1 5.0 0.88 7 -167.5 3.27 5 73. 1 0.03 1 21.8 0.43 1 -164.8 6.0 0.89 3 -170.0 2.74 1 67. 3 0.03 1 24.5 0.44 9 -164.8 7.0 0.89 8 -171.6 2.34 1 62. 4 0.03 1 26.6 0.46 7 -164.9 8.0 0.90 1 -173.3 2.03 6 57. 4 0.03 1 27.6 0.48 5 -164.8 9.0 0.90 1 -174.1 1.79 3 53. 2 0.02 9 28.8 0.49 6 -165.0 10.0 0.90 6 -174.9 1.60 4 49. 2 0.02 9 33.3 0.51 1 -165.2 11.0 0.91 2 -175.3 1.44 9 45. 1 0.02 8 35.6 0.52 6 -166.2 12.0 0.92 1 -175.9 1.31 6 40. 9 0.02 9 36.4 0.53 8 -168.1 13.0 0.92 9 -176.3 1.20 2 36. 6 0.02 9 36.0 0.55 3 -170.8 14.0 0.92 9 -176.6 1.09 6 32. 2 0.03 0 36.4 0.56 4 -174.4 15.0 0.93 4 -176.7 1.01 0 27. 8 0.03 0 37.1 0.57 8 -179.0 16.0 0.92 9 -176.6 0.92 0 23. 2 0.03 1 33.7 0.597 175.9 17.0 0.93 3 -175.9 0.84 9 19. 1 0.03 1 32.2 0.623 171.0 18.0 0.94 3 -176.0 0.79 0 14. 4 0.03 3 30.4 0.652 165.8 19.0 0.94 3 -176.3 0.73 1 9. 7 0.03 4 31.5 0.684 161.2 20.0 0.94 1 -176.7 0.67 2 5. 2 0.03 6 31.0 0.710 157.2 21.0 0.93 0 -176.9 0.61 6 1. 7 0.03 9 31.3 0.734 155.0 22.0 0.92 5 -177.3 0.57 8 -1. 6 0.04 2 31.5 0.764 153.3 23.0 0.92 6 -177.9 0.54 5 -4. 1 0.04 7 32.0 0.790 152.4 24.0 0.92 6 -179.1 0.51 8 -6. 9 0.05 1 33.7 0.807 152.1 25.0 0.906 179.0 0.49 2 -8. 9 0.05 7 34.8 0.817 152.4 26.0 0.906 178.1 0.47 1 -10. 2 0.06 4 36.7 0.811 154.7 n o t e : t h e data inc l ud e d 0.7 mi l s diam e t e r a u b o ndin g w i r e s : 4 g at e w i r e s, 15 mi l s e ach; 4 d r ain w i r e s, 20 mi l s e ach; 10 s o u r c e w i r e s, 7 mi l s e ach. p-1db & p a e v s . vds 24 26 28 30 32 34 36 38 40 4 5 6 7 8 dra i n-so u rc e volta g e (v) p - 1 d b ( d bm ) 10 15 20 25 30 35 40 45 50 pa e ( % ) f = 12 ghz i ds = 50% i d ss p out & p a e v s . pin 0 10 20 30 40 50 -5 0 5 10 15 20 25 pin ( d bm) po ut ( d bm) o r pa e ( % ) f = 1 2 g h z vd s = 8v, i d s = 5 0 % i d ss p a e p o ut
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