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1 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 1. product overview 1.1 general description aw g2023 , a gain block amplifier mmic, has high linearity , low noise and high efficiency over a wide range of frequency from 3 0 mhz to 4000 mhz, be ing suitable for use in both receiver and transmitter of telecommunication system up to 4 ghz . it has an active bias network for stable current over temperature and process variation. the amplifier is available in a n sot89 package and passes through the st ringent dc , rf , and reliability test s. 1.2 features ? 21.6 db gain at 20 00 mhz ? 19.0 dbm p1db at 2000 mhz ? 36.0 dbm oip3 at 2000 mhz ? gain flatness = 2.8 db at 500 ~ 25 00 mhz ? 50 ? input & output matching ? mttf > 100 years ? single supply: + 3.3 v 1.3 applic ations ? wide - band application at 500 ~ 300 0 mhz ? if, catv application at 3 0 ~ 1 2 00 mhz ? smatv, onu application at 50 ~ 30 00 mhz 1.4 package profile & rohs compliance sot89 , 4.5x4.0 mm 2 , surface mount rohs - compliant AWG2023 data sheet 5 0 ~ 4000 mhz wide - band gain block amplifier mmic gain & return loss vs. frequency(with biastees) 0 1000 2000 3000 4000 5000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) s21 s11 s22
2 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 2. summary on product performances 2.1 typ ical performance supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter typical unit frequency 70 150 300 450 900 2000 2500 2700 mhz gain 24.0 23.9 23.8 23.7 23.1 21.6 20.9 20.6 db s11 - 16.0 - 17.0 - 17.0 - 17.0 - 18.0 - 18.0 - 15.0 - 14.0 db s22 - 14.0 - 14.0 - 15.0 - 15.0 - 12.0 - 15 .0 - 17.0 - 18.0 db noise figure 1.5 1.5 1.5 1.5 1.4 1.8 2.1 2.4 db output ip3 1) 34.0 35.0 35.0 36.0 36.0 36.0 35.0 31.0 dbm output p1db 18.0 18.0 18.0 18.0 19.0 19.0 19.0 18.0 db m current 78 ma device voltage +3.3 v 1) oip3 i s measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 2.2 product specification supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter min typ max unit frequency 2000 mhz gain 21.6 db s11 - 18.0 db s22 - 15 .0 db noise figure 1.8 db oip3 36.0 dbm p1db 19.0 dbm current 78 ma device voltage +3.3 v 2.3 pin configuration pin description simplified outline 1 rf_in 2 ground 3 rf_out & bias
3 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 2.4 absolute maximum ratings parameters max. ratings operation case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage + 6 v operation junction temperature +150 ? c input rf power (cw, 50 ? ma tched) +29 dbm 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 80 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1b voltage level: 750 v mm class a voltage level: 100 v cau tion: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity level m sl 3 at 260 ? c reflow (intentionally blanked)
4 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a2 3. application : 5 00 ~ 3 0 00 mhz 3.1 application circuit & evaluation board bill of material symbol value size description manufacturer AWG2023 - - mmic amplifier asb c1, c2 100 pf 0603 dc block ing capacitor murata c3 100 pf 06 03 decoupling capacitor murata c 4 1 ? f 0603 decoupling capacitor murata l1 39 nh 0603 rf choke inductor murata c1 c2 c3 l1 c4 AWG2023 rf in rf out vdevice = +3.3 v
5 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 3.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 500 900 2000 2500 2700 3000 mhz gain 23.4 23.1 21.6 20.9 20.6 20.3 db s11 - 15.0 - 18.0 - 18.0 - 15.0 - 14.0 - 12.0 db s22 - 11 .0 - 12.0 - 15 .0 - 17.0 - 18.0 - 18.0 db noise figure 1.4 1.4 1.8 2.1 2.4 2.9 db output ip3 1) 36.0 36.0 36.0 35.0 31.0 27.0 dbm output p1db 18.0 19.0 19.0 19.0 18.0 17.0 dbm current 78 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 3.3 plot of s - parameter & stability factor 0 1000 2000 3000 4000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 stability factor, k s21 s12 s11 s22 k
6 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 3.4 plot s of noise figure and performances with temperature -60 -40 -20 0 20 40 60 80 100 temperature (c) 50 55 60 65 70 75 80 85 90 current (ma) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 gain (db) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 2000 mhz
7 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 -60 -40 -20 0 20 40 60 80 100 temperature (c) 14 16 18 20 22 p1db (dbm) frequency = 2000 mhz
8 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 pcb i nformation material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a2 4. application : 30 ~ 12 00 mhz ( if, catv ) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer AWG2023 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 3.3 ? h 0603 rf choke inductor samsung c1 c2 c3 l1 c4 AWG2023 rf in rf out vdevice = +3.3 v
9 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 4.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 30 70 150 300 450 860 1000 1200 mhz gain 24.1 24.0 23.9 23.8 23.7 23.2 23.0 22.6 db s11 - 13.0 - 16.0 - 1 7.0 - 17.0 - 17.0 - 16.0 - 15.0 - 14.0 db s22 - 15.0 - 14.0 - 14.0 - 15.0 - 15.0 - 16.0 - 17.0 - 18.0 db noise figure 1.6 1.5 1.5 1.5 1.5 1.5 1.5 1.5 db output ip3 1) 34.0 34.0 35.0 35.0 36.0 35.0 34.0 34.0 dbm output p1db 18.0 18.0 18.0 18.0 18.0 18.0 18.0 18.0 dbm current 78 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 4.3 plot of s - parameter & stability factor 0 300 600 900 1200 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 stability factor, k s21 s12 s11 s22 k
10 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a2 5. application : 50 ~ 30 00 mhz ( smatv, onu ) 5.1 application circuit & evaluation board b ill of material symbol value size description manufacturer AWG2023 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 1 ? h 0603 rf choke inductor samsung c1 c2 c3 l1 c4 AWG2023 rf in rf out vdevice = +3.3 v
11 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 5.2 performance tab le supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 50 500 1000 2000 2500 3000 mhz gain 23.8 23.5 22.8 20.6 19.6 18.3 db s11 - 13.0 - 16.0 - 15.0 - 12.0 - 11.0 - 12.0 db s22 - 13.0 - 13.0 - 15.0 - 15.0 - 14.0 - 14.0 db noise figur e 1.5 1.4 1.4 1.7 2.1 2.6 db output ip3 1) 34.0. 36.0 35.0 34.0 35.0 28.0 dbm output p1db 18.0 18.0 18.0 18.0 18.0 16.0 dbm current 78 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 5.3 plo t of s - parameter & stability factor 0 500 1000 1500 2000 2500 3000 3500 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 s21 s12 s11 s22 k
12 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 6. package outline (sot89, 4.5x4.0x1.5 mm) 7. surface mount recommendation (in mm) symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3 .64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 wg2023 pxxxx lot no. part no. n ote 1. the number and size of ground via holes in a cir cuit board are critical for thermal and rf grounding considerations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side.
13 / 13 asb inc. ? sales@asb .co.kr april 2014 AWG2023 8. recommended soldering reflow profile (end of datasheet) 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)

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