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chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 1 / 14 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel .: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 25w power packaged transistor gan hemt on sic description the chk025a - soa is an unmatched p ackaged gallium nitride high electron mobility transistor. it offers general purpose and broadband solution s for a variety of rf power applications. it is well suited for multi - purpose applications such as radar and telecommunica tion. the chk025a - soa is developed on a 0.5m gate length gan hemt process . it requires an external matching circuitry . the chk025a - soa is available as a ceramic - metal flange power package providing lo w par asitic and low thermal resistance. main features v ds = 50v, i d_q = 200ma, freq=4ghz pulsed mode i ntrinsic performance s of the packaged device wide band capability: up to 5ghz pulsed and cw operating modes high power: > 25w high efficiency: up to 70% dc bias: v ds =50v @ i d_q =200ma mttf > 10 6 hours @ tj=200c rohs flange ceramic package main electrical characteristics tcase= +25c, p ulsed mode , f = 4ghz, v ds =50v, i d_q =200ma symbol parameter min typ max unit g ss small signal gain 15 17 db p sat saturated output power 30 38 w pae max power added efficiency 5 5 60 % g pae_max associated gain at max pae 1 3 db pout pae id gain
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 2 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended dc operating ratings tcase= +25c symbol parameter min typ max unit conditions v ds drain to source voltage 20 50 v v gs_q gate to source voltage - 1. 9 v v d =50v, i d_q =200ma i d_q quiescent drain current 0.2 0.65 a v d =50v i d _max drain current 1.3 (1) a v d =50v, compressed mode i g_max gate current (forward mode) 0 1 6 ma compressed mode t j _max junction temperature 200 c (1) limited by dissipated power dc characteristics tcase = +25c symbol parameter min typ max unit conditions v p pinch - off voltage - 3 - 2 - 1 v v d =50v, i d = i dss /100 i d_sat saturated drain current 5.4 (1) a v d =7v, v g = 2 v i g_leak gate leakage current (reverse mode) - 2 m a v d =50v, v g = - 7v v bds drain - source break - down voltage 200 v v g = - 7v, i d =20ma r th thermal resistance 3.7 c/w (1) for information, limited by i d _max , s ee on absolute maximum ratings rf characteristics (cw) tcase= +25c, cw mode , f = 4ghz, v ds =50v, i d_q =200ma symbol parameter min typ max unit g ss small signal gain 14 16 - db p sat saturated output power 28 35 - w pae max power added efficiency 50 55 - % g pae_max associated gain at max pae 12 - db
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 3 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 rf characteristics (pulsed) tcase= +25c, pulse mode (1) , f = 4ghz, v ds =50v, i d_q =200ma symbol parameter min typ max unit g ss small signal gain 15 17 db p sat saturated output power 30 38 w pae max power added efficiency 5 5 60 % g pae_max associated gain at max pae 1 3 db (1) input rf and gate voltage are pulsed. conditions are 25s wid th, 10% duty cycle and 1s offset between rf and dc pulse. these values are the intrinsic performance of the packaged device. they are deduced from measurements and simulations. they are considered in the reference plane defined by the leads of the package, at the connection interface with the pcb. the typical performance achievable in more than 20 % frequency band around 4ghz was demonstrated using the reference board 61500252 presented hereafter. absolute maximum ratings (1) tcase = +25c (1) , (2), (3) symbol parameter rating unit note v ds drain - source voltage 60 v v gs _q gate - source voltage - 10, +2 v (6) i g _ max maximum gate current in forward mode 48 ma i g _ m in maximum gate current in reverse mode - 8 ma i d_ max maximum drain current 4 a (4) p in maximum input power (typical) 37 dbm (5) t j junction temperature 220 c t stg storage temperature - 55 to +150 c t c ase case operating temperature see note c (4) ( 1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. (3 ) the given values must not be exceeded at the same time even momentarily for any parameter, since each parameter is independent from each other, otherwise deterioration or destruction of the device may take place. (4) max junction temperature must be considered (5) @ 4ghz - linked to and limited by i g_max & i g_min values (6) v gs _q max limited by i d _max and i g _ max values
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 4 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 simulated source and load impedance v ds = 50v, i d_q = 200ma frequency (mhz) source load 1000 4 . 3 + j4 10 . 9 + j22 . 45 2000 1 . 5 - j1 . 5 7 . 2 + j10 . 7 3000 2 . 7 - j4 . 65 4 . 8 + j1 . 01 4000 3 . 9 - j8 . 6 4 . 27 - j0 . 38 4500 6 . 4 - j11 3 . 44 - j1 . 87 5000 7 . 8 - j3 . 2 2.5 - j3 . 8 these values are given in the reference plane defined by the connection between the package leads and the pcb. a gap of 200m is considered between the edge of the package and the pcb. zload zsource
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 5 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical s - parameters tcase= +25c, cw mode, v d =50v, i d_q = 200ma , phase s(i,j) in freq (ghz) mag s(1,1) phase s(1,1) mag s(2,1) phase s(2,1) mag s(1,2) phase s(1,2) mag s(2,2) phase s(2,2) 0.25 0.886 - 129.437 30.314 104.238 0.014 17.910 0.389 - 86.172 0.50 0.875 - 154.667 15.860 83.192 0.014 0.651 0.390 - 106.758 0.75 0.879 - 164.613 10.371 69.970 0.013 - 8.091 0.452 - 117.153 1.00 0.887 - 170.456 7.503 59.368 0.011 - 13.026 0.522 - 125.117 1.25 0.895 - 174.726 5.748 50.243 0.010 - 14.452 0.587 - 132.020 1.50 0.903 - 178.272 4.575 42.177 0.008 - 11.379 0.644 - 138.196 1.75 0.911 178.557 3.746 34.942 0.007 - 2.075 0.691 - 143.771 2.00 0.917 175.594 3.138 28.383 0.006 13.981 0.730 - 148.834 2.25 0.921 172.749 2.680 22.377 0.006 32.012 0.762 - 153.458 2.50 0.925 169.964 2.329 16.821 0.007 45.433 0.788 - 157.712 2.75 0.928 167.201 2.055 11.629 0.009 53.094 0.809 - 161.656 3.00 0.929 164.426 1.839 6.728 0.011 56.772 0.826 - 165.344 3.25 0.930 161.611 1.666 2.053 0.013 58.056 0.840 - 168.822 3.50 0.930 158.728 1.529 - 2.453 0.015 57.905 0.852 - 172.133 3.75 0.930 155.747 1.419 - 6.843 0.018 56.856 0.861 - 175.311 4.00 0.928 152.639 1.331 - 11.165 0.020 55.212 0.868 - 178.391 4.25 0.926 149.371 1.262 - 15.466 0.023 53.147 0.874 178.597 4.50 0.923 145.903 1.209 - 19.792 0.025 50.758 0.878 175.626 4.75 0.919 142.192 1.169 - 24.190 0.028 48.095 0.881 172.669 5.00 0.914 138.185 1.142 - 28.711 0.031 45.179 0.883 169.699 5.25 0.909 133.819 1.126 - 33.409 0.035 42.006 0.884 166.688 5.50 0.901 129.016 1.120 - 38.343 0.038 38.553 0.884 163.608 5.75 0.893 123.683 1.125 - 43.583 0.042 34.782 0.883 160.426 6.00 0.883 117.703 1.140 - 49.205 0.047 30.634 0.881 157.107 6.25 0.871 110.934 1.166 - 55.300 0.052 26.035 0.879 153.606 6.50 0.856 103.202 1.202 - 61.972 0.058 20.892 0.876 149.873 6.75 0.840 94.296 1.249 - 69.338 0.064 15.089 0.873 145.839 7.00 0.821 83.976 1.305 - 77.527 0.071 8.501 0.869 141.418 7.25 0.801 71.985 1.369 - 86.673 0.079 0.987 0.865 136.486 7.50 0.781 58.096 1.439 - 96.903 0.087 - 7.587 0.861 130.871 7.75 0.764 42.204 1.509 - 108.312 0.096 - 17.331 0.858 124.332 8.00 0.753 24.459 1.572 - 120.946 0.105 - 28.309 0.854 116.539 8.25 0.753 5.387 1.620 - 134.786 0.113 - 40.525 0.850 107.059 8.50 0.766 - 14.137 1.644 - 149.757 0.119 - 53.936 0.844 95.370 8.75 0.791 - 33.132 1.637 - 165.763 0.123 - 68.479 0.835 80.892 9.00 0.825 - 50.842 1.592 177.304 0.125 - 84.093 0.822 63.091 9.25 0.862 - 66.886 1.504 159.605 0.122 - 100.664 0.809 41.721 9.50 0.897 - 81.185 1.372 141.482 0.115 - 117.910 0.801 17.258 9.75 0.926 - 93.780 1.202 123.552 0.105 - 135.283 0.804 - 8.747 10.00 0.946 - 104.730 1.013 106.595 0.092 - 152.073 0.819 - 34.034
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 6 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 maximum gain & stability characteristics tcase= +25c, cw mode, v d =50v, i d_q = 200ma k factor maximum gain 0 1 2 3 4 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 k factor max gain (db) frequency (ghz)
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 7 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical performance on demonstration board (ref. 61500252 ) calibration and measurements are done on the connector reference accesses of the demonstration boards. tcase = +25c, cw mode measured pout, gain , pae & id f = 4ghz, v ds = 50v, i d_q = 200ma measured pout , pae & gain pin = 32 . 5 dbm, v ds = 50v, i d_q = 200ma pout pae gain id gain pout pae 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 45 50 55 60 10 15 20 25 30 35 drain current (a) pout (dbm), gain (db) & pae (%) input power (dbm) 39 40 41 42 43 44 45 46 47 48 49 50 0 5 10 15 20 25 30 35 40 45 50 55 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 pout (dbm) gain (db) & pae (%) frequency (ghz)
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 8 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical performance on demonstration board (ref. 61500252 ) calibration and measurements are done on the connector reference accesses of the demonstration boards . tcase = +25c, pulsed mode (1) measured pout, gain, pae & id f = 4ghz, v ds = 50v, i d_q = 200ma measured pout , pae & gain pin = 32. 5 dbm, v ds = 50v, i d_q = 200ma (1) input rf and gate voltage are pulsed. c onditions are 25s wid th, 10% duty cycle and 1s offset between rf and dc pulse. pout pae gain id pae pout gain 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 45 50 55 60 10 15 20 25 30 35 drain current (a) pout (dbm), gain (db) & pae (%) input power (dbm) 39 40 41 42 43 44 45 46 47 48 49 50 0 5 10 15 20 25 30 35 40 45 50 55 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 pout (dbm) gain (db) & pae (%) frequency (ghz)
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 9 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical performance on demonstration board (ref. 61500252 ) calibration and measurements are done on the connector reference accesses of the demonstration boards tcase = +25c, cw mode measured s parameters v ds = 50v, i d_q = 200ma s21 s22 s11 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 12 14 16 18 2 2.5 3 3.5 4 4.5 5 5.5 6 sij (db) frequency (ghz)
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 10 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 demonstration amplifier low frequency equivalent schematic (ref. 61500252 ) demonstration amplifier (ref. 61500252 ) / bill of materials designator type value - description qty c1 capacitor 0.4pf, +/ - 0.05pf, 0603 1 c2 capacitor 0.6pf, +/ - 0.05pf, 0603 1 c3 capacitor 8.2pf, +/ - 0.25%, 0603 2 c4 capacitor 82pf, +/ - 5%, 0603 2 c5 capacitor 1nf, +/ - 5%, 0805 2 c6 capacitor 10nf, +/ - 5%, 0805 2 c7 capacitor 1f, +/ - 10%, 1204 1 c8 capacitor 68f, +/ - 10%, 1204 1 r1 resistor 147?, +/ r2..r6 resistor 5,6? +/ j1 connector cms 3cts 1 j2 connector cms 5cts 1 j3,j4 connector sma 2 q1 package d transistor chk025a - soa 1 - pcb ro4003, er=3.55, h= 508m - + + this external loop may allow to measure drain current using a current probe vg vd j1 j 2 j 3 j 4
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 11 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 demonstration amplifier circuit (ref. 61500252 )
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 12 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline ( a ) tcase locates the reference point used to monitor the device temperature. this point has been taken at the device / system interface to ease system thermal design. chamfered lead indicates the gate access of the packaged transistor . tcase (a ) (c) tcase (a ) (c) all dimensions are in mm
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 13 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly procedure chk025a - soa is available has a flange package to be bolt down onto a thermal heat sink also used as main electrical ground. use preferably screw m2 and flat washers. thermal and electrical resistance at the package to heat sink interface has to be as low as possible. thermal electrically conductive grease or conductive thin layer like indium sheets are recommended between the package and the heat sink. in case a thermal grease is selected, we recommend to use material offering thermal conductivity >5w/m.k and electrical resistivity <0.01 ohm.cm. the grease layer thickness should be about 25m (1 mil). contact interface quality can be improved by cleaning process prior device mounting on the heat - sink. such ope ration will enhance the thermal and electrical contact by oxides removal at each interface. package leads can be soldered on printed circuit boards traces by using rohs solder past.
25w power packaged transistor chk025a - soa ref. : dschk025asoa3021 - 21 jan 13 14 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information package: chk025a - soa /xy tray : xy = 26 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties wh ich may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semi conductors s.a.s.

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