digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115 MCR72 series silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +110c, sine wave, 50 to 60hz, gate open) MCR72-1 MCR72-2 MCR72-3 MCR72-4 MCR72-5 MCR72-6 MCR72-7 MCR72-8 v drm v rrm 25 50 100 200 300 400 500 600 v on-state rms current (180 conduction angles, t c = 83c) i t(rms) 8.0 a peak non-repetitive surge current (half-cycle, sine wave, 60hz, t j = 110c) i tsm 100 a circuit fusing consideration (t = 8.3ms) i 2 t 40 a 2 s forward peak gate voltage (t 10s, t c = 83c) v gm 5.0 v forward peak gate current (t 10s, t c = 83c) i gm 1.0 a forward peak gate power (pulse width 10s, t c = 83c) p gm 5.0 w average gate power (t = 8.3ms, t c = 83c) p g(av) 0.75 w operating junction temperature range t j -40 to +110 c storage temperature range t stg -40 to +150 c mounting torque - 8.0 in. lb. note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the volta ge ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.2 c/w thermal resistance, junction to ambient r ? ja 60 c/w lead solder temperature (lead length 1/8? from case, 10s max) t l 260 c electrical characteristics (t j = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics peak forward or reverse blocking current (2) (v ak = rated v drm or v rrm , r gk = 1k ? ) t c = 25c t c = 110c i drm, i rrm - - - - 10 500 a on characteristics peak forward on-state voltage (i tm = 16a, pulse width 1ms, duty cycle 2%) v tm - 1.7 2.0 v gate trigger current (continuous dc) (3) (v d = 12v, r l = 100 ? ) i gt - 30 200 a gate trigger voltage (continuous dc) (3) (v d = 12v, r l = 100 ? ) v gt - 0.5 1.5 v
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR72 series silicon controlled rectifiers gate non-trigger voltage (v d = 12v, r l = 100 ? , t j = 110c) v gd 0.1 - - v holding current ( v d = 12v, gate open, initiating current = 200ma) i h - - 6.0 ma gate controlled turn-on time (v d = rated v drm , i tm = 16a, i g = 2ma) t gt - 1.0 - s dynamic characteristics critical rate of rise of off-state voltage (v d = rated v drm , r gk = 1k ? , t j = 110c, exponential waveform) dv/dt - 10 - v/s note 2. ratings apply for negative gate voltage or r gk = 1k ? . devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant current source for forward and re verse blocking capability such that the voltage applied exceeds the rated blocking voltage. note 3: r gk current not included in measurement. mechanical characteristics case to-220ab marking alpha-numeric pin out see below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR72 series silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
|
