2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK1284 features low on-state resistance r ds(on) 0.32 .@v gs =10v,i d =2a r ds(on) 0.40 @v gs =4v,i d =2a low ciss ciss=500pf typ. built-in g-s gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current (dc) i d 3.0 a drain current(pulse) * i d 12 a power dissipation t c =25 2.0 w t a =25 1.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 5% p d electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 2.5 v forward transfer admittance y fs v ds =10v,i d =2a 2.4 s v gs =10v,i d =2a 0.26 0.32 v gs =4.0v,i d =2a 0.32 0.40 input capacitance c iss 500 pf output capacitance c oss 160 pf reverse transfer capacitance c rss 20 pf turn-on delay time t d(on) 40 ns rise time t r 55 ns turn-off delay time t d(off) 500 ns fall time t f 120 ns v ds =10v,v gs =0,f=1mhz i d =2a,v gs(on) =10v,r l =25 ,v dd =50v,r g =10 drain to source on-state resistance r ds(on) 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type smd type smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type smd type smd type product specification
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