sot-363 plastic-encapsulate mosfets CJ3134KDW dual n-channel mosfet feature ? lead free product is acquired ? surface mount package ? n-channel switch with low r ds(on) ? operated at low logic level gate drive ? equivalent to two cj3134k application ? load/power switching ? interfacing switching ? battery management for ultra small portable electronics ? logic level shift marking: 34k absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t 10s ) i d 0.75 a power dissipation* p d 0.15 w thermal resistance from junction to ambient r ja 833 /w junction temperature t j 150 storage temperature t stg -55~ +150 * repetitive rating : pulse width limited by junction temperature. sot-363 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,sep,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 50 a gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.35 1 v v gs =4.5v, i d =0.65a 380 m ? v gs =2.5v, i d =0.55a 450 m ? drain-source on-resistance (note 1) r ds(on) v gs =1.8v, i d =0.45a 800 m ? forward tranconductance (note 1) g fs v ds =10v, i d =0.8a 1.6 s diode forward voltage (note 1) v sd i s =0.15a, v gs = 0v 1.2 v dynamic parameters (note 2) input capacitance c iss 79 120 pf output capacitance c oss 13 20 pf reverse transfer capacitance c rss v ds =16v,v gs =0v,f =1mhz 9 15 pf switching parameters (note 2) turn-on delay time t d(on) 6.7 ns turn-on rise time t r 4.8 ns turn-off delay time t d(off) 17.3 ns turn-off fall time t f v gs =4.5v,v ds =10v, i d =0.5a,r gen =10 ? 7.4 ns total gate charge q g 20 nc gate-source charge q gs 1 nc gate-drain charge q gd v ds =10v,v gs =4.5v,i d =7a 4 nc notes : 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,sep,2013
01234 0 1 2 3 4 12345 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 1e-4 1e-3 0.01 0.1 1 10 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0.0 0.2 0.4 0.6 0.8 1.0 v gs =10.0v 4.5v 3.5v v gs =2.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =0.65a t a =25 pulsed v gs ?? r ds(on) CJ3134KDW drain current i d (a) gate to source voltage v gs (v) v ds =5.0v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =250ua threshold voltage v gs =2.5v drain current i d (a) on-resistance r ds(on) ( ? ) i d ?? r ds(on) t a =25 pulsed v gs =4.5v v gs =1.8v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,sep,2013
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