MJE5741 300 350 600 700 8 mje5742 400 800 8 16 2.5 5 2 16 80 640 -65 to +150 unit vdc vdc vdc adc adc watts mw/c watts mw/c c (1) pulse test: pulse width = 5 ms, duty cycle = 10%. thermal characteristics characteristic thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol rbjc r6ja tl max 1.56 62.5 275 unit "c/w "c/w c electrical characteristics f!"c = 25c unless otherwise noted) mje5740 MJE5741* mje5742* 'motorola preferred device power darlington transistors 8 amperes 300, 350, 400 volts 80 watts to-220ab characteristic symbol min typ | max | unit off characteristics (2) collector-emitter sustaining voltage mje5740 (1c = 50 ma, ib = 0) MJE5741 mje5742 collector cutoff current (vqev = rated value, vge(off) = 1 -5 vdc) (vcev = rated value, vbe(off) = 1 -5 vdc. tc = 1c) emitter cutoff current (veb = 8 vdc, ic = 0) vceo(sus) !cev 'ebo 300 350 400 ? ? ? ? ? ? ? 1 5 75 vdc madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased is/b rbsoa see figure 6 see figure 7 (2) pulse test: pulse width = 300 us, duty cycle = 2%. (continued) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. ounlitv
mje574o MJE5741 mje5742 electrical characteristics ? continued (tc = 25c unless otherwise noted) characteristic symbol win typ max unit on characteristics (1) dc current gain (lc = 0.5 adc, vce = 5 vdc) (lc = 4 adc, vce = 5 vdc) collector-emitter saturation voltage (lc = 4 adc, ib = 0.2 adc) (ic = 8adc, ib = 0.4 adc) (1c = 4 adc, ib = 0.2 adc, tc = 100c) base-emitter saturation voltage (lc = 4 adc, ib = 0.2 adc) (ic = 8 adc, ib = 0.4 adc) (lc = 4 adc, ib = 0.2 adc, tc = 100c) diode forward voltage (2) (ip = 5 adc) hfe vce(sat) vbe(sat) vf 50 200 ? ? ? 100 400 ? ? ? 2 3 2.2 2.5 3.5 2.4 2.5 ? vdc vdc vdc switching characteristics typical resistive load (table 1) delay time rise time storage time fall time (vcc = 250 vdc, lc(pk) = 6 a 'b1 ~ 'b2 u.^o a, tp ^s p.s, duty cycle < 1%) ?d ?r *s tf ? ? ? ? 0.04 0.5 8 2 ? ? ? _. us (is us us inductive load, clamped (table 1) voltage storage time crossover time oc(pk) = 6 a, vce(pk) = 250 vdc ib1 = 6.06 a, vbe(off) = 5 vdc) tsv tc ? ? 4 2 ? ? us us (1) pulse test: pulse width 300 us. duty cycle = 2%. (2) the internal collector-to-emitter diode can eliminate the need for an external diode to clamp inductive loads. tests have shown that the forward recovery voltage (vf) of this diode is comparable to that of typical fast recovery rectifiers. typical characteristics g cd z i lu q 100 80 60 40 20 s ^ the ^ \l de s sec , |
