description features z z z z z application z z z z z z z (top view) pin connections 1 4 wpm 4801 p-channel enhancement mode mosfet the wpm4 801 is the dual p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . -30v/- 5.0 a,r ds(on) = 37 m@v gs = - 10v -30v/- 4.0 a,r ds(on) = 45 m@v gs = - 4.5v super high density cell design for extremely low rds (on) exceptional on-resistance and maximum dc current capability sop C 8p package design power management in note book portable equipment battery powered system dc/dc converter load switch dsc lcd display inverter g1 d1 g2 s1 d1 s2 d2 d2 8 marking diagram and explain order information 3 d u w 1 x p e h u 3 d u w 1 x p e h u 6 k l s s l q j wpm 4801 -8/tr sop-8p 2500 tape&reel = date code = specific device code wpm4 801 yyww yyww WPM4801 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings pin assignment pin symbol description 1 s1 source 1 2 g1 gate 1 3 s2 source 2 4 g2 gate 2 5 d2 drain 2 6 d2 drain 2 7 d1 drain 1 8 d1 drain 1 (t a =25 unless otherwise noted) : parameter symbol typical unit drain-source voltage v dss -30 v gate Csource voltage v gss 12 v t a =25 : -5.6 continuous drain current(t j =150 ) : t a =70 : i d -4.5 a pulsed drain current i dm -30 a continuous source current(diode conduction) i s -2.3 a t a =25 : 2.0 power dissipation t a =70 : p d 1.2 w operating junction temperature t j -55/150 : storage temperature range t stg -55/150 : thermal resistance-junction to ambient ja 62.5 : /w r wpm 4801 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
(t a =25 unless otherwise noted) : parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d 0.6 - 1.4 v gate leakage current i gss v ds =0v,v gs = 12 v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =85 : -10 ua on-state drain current i d(on) v ds = -5v,v gs =-10v -25 a v gs =-10v,i d =- 5 . 0 a 0.0 37 0.0 50 drain-source on-resistance r ds(on) v gs =-4.5v,i d =- 4 . 0 a 0.0 forward transconductance gfs v ds =- 5 v, i d =- 4 . 3 a 12 s diode forward voltage v sd i s =-1.0a,v gs =0v -0. 75 -1.5 dynamic total gate charge q g 10 15 gate-source charge q gs 3.4 gate-drain charge q gd v ds =-15v,v gs =-10v i d = - 4.3 a 1.7 nc input capacitance c iss 560 output capacitance c oss 100 reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1mhz 67 pf t d(on) 7 15 turn-on time t r 10 20 t d(off) 40 80 turn-off time t f v dd =-15v,r l =15 i d - 1.0 a,v gen =-10v r g =6 20 40 ns electrical characteristics 0.0 36 6 0.0 30 =-250ua - 1.0 - 45 0.0 60 v wpm 4801 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristis 012345 0 6 12 18 24 30 v gs =4.5v v gs =4v v gs =10v v gs =5v v gs =3v v gs =6v i d ,drain current(a) drain current vs drain-source voltage v ds ,drain-source voltage(v) 012345 0 5 10 15 20 25 30 35 v gs ,gate-source voltage(v) i d ,drain current(a) drain current vs gate-source voltage v ds =3v 246810 60 80 100 120 140 r dson resistance vs gate-source voltage r dson resistance(mohm) v gs gate-source voltage i d =4.6a,t=25 o c 0.2 0.4 0.6 0.8 0.0 0.5 1.0 1.5 2.0 t=25 o c source current vs source to drain voltage i s source current(a) v sd source to drain voltage wpm 4801 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-50 -25 0 25 50 75 100 125 150 175 -0.15 -0.10 -0.05 0.00 0.05 0.10 0.15 0.20 gate-source voltage vs temperature v gs(on) vaniance(v) t j temperature( o c) i d =250(ua),v gs =v ds -40 0 40 80 120 160 45 50 55 60 65 70 r dson resistance vs t j temperature r dson resistance(mohm) t j temperature( o c) v gs =10v i d =4.6a 0102030 0.05 0.10 0.15 v gs =10v v gs =6.0v v gs =4.5v r dson resistance vs i d ,drain current r dson resistance(ohm) i d ,drain current(a) typical characteristis wpm 4801 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristis wpm 4801 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
packaging information wpm 4801 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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