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| inchange semiconductor product specification silicon npn power transistors 2N6326 2n6327 2n6328 description ? with to-3 package ? low collector saturation voltage ? high dc current gain applications ? designed for audio amplifier and switching circuits applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N6326 60 2n6327 80 v cbo collector-base voltage 2n6328 open emitter 100 v 2N6326 60 2n6327 80 v ceo collector-emitter voltage 2n6328 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 30 a i b base current 7.5 a p d total power dissipation t c =25 ?? 200 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N6326 2n6327 2n6328 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6326 60 2n6327 80 v ceo(sus) collector-emitter sustaining voltage 2n6328 i c =0.2 a ;i b =0 100 v v cesat collector-emitter saturation voltage i c =15a; i b =1.5a 1.2 v v besat base-emitter saturation voltage i c =15a; i b =1.5a 1.5 v v be base-emitter on voltage i c =8a ; v ce =4v 1.5 v 2N6326 v cb =60v; i e =0 t c =150 ?? 1.0 5.0 2n6327 v cb =80v; i e =0 t c =150 ?? 1.0 5.0 i cbo collector cut-off current 2n6328 v cb =100v; i e =0 t c =150 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =4v; i c =0 1.0 ma h fe-1 dc current gain i c =8a ; v ce =4v 25 h fe-2 dc current gain i c =30a ; v ce =4v 6 30 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 3 mhz inchange semiconductor product specification 3 silicon npn power transistors 2N6326 2n6327 2n6328 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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