IRF540N power mosfet parameter typ. max. units r jc junction-to-case ??? 1.15 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance v dss = 100v r ds(on) = 44m ? i d = 33a s d g to-220ab the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching fully avalanche rated description absolute maximum ratings parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 33 i d @ t c = 100 c continuous drain current, v gs @ 10v 23 a i dm pulsed drain current 110 p d @t c = 25 c power dissipation 130 w linear derating factor 0.87 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 7.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf in (1.1n m) 2014-8-9 1 www.kersemi.com
IRF540N s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25 c, i s = 16a, v gs = 0v t rr reverse recovery time ??? 115 170 ns t j = 25 c, i f = 16a q rr reverse recovery charge ??? 505 760 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 33 110 a starting t j = 25 c, l =1.5mh r g = 25 ? , i as = 16a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: i sd 16 a, di/dt 340a/s, v dd v (br)dss , t j 175 c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175 c . parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 44 m ? v gs = 10v, i d = 16a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 21 ??? ??? sv ds = 50v, i d = 16a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 71 i d = 16a q gs gate-to-source charge ??? ??? 14 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 21 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 11 ??? v dd = 50v t r rise time ??? 35 ??? i d = 16a t d(off) turn-off delay time ??? 39 ??? r g = 5.1 ? t f fall time ??? 35 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1960 ??? v gs = 0v c oss output capacitance ??? 250 ??? v ds = 25v c rss reverse transfer capacitance ??? 40 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 700 185 mj i as = 16a, l = 1.5mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current 2014-8-9 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 33a 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 50v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j IRF540N 2014-8-9 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 20 40 60 80 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 16a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) t a = 25 c t j = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec IRF540N 2014-8-9 4 www.kersemi.com
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) IRF540N 2014-8-9 5 www.kersemi.com
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.5a 11.3a 16a IRF540N 2014-8-9 6 www.kersemi.com
peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets IRF540N 2014-8-9 7 www.kersemi.com
lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 ( .052 ) 1.22 ( .048 ) 3x 0.55 ( .022 ) 0.46 ( .018 ) 2.92 ( .115 ) 2.64 ( .104 ) 4.69 ( .18 5 ) 4.20 ( .16 5 ) 3x 0.93 ( .037 ) 0.69 ( .027 ) 4.06 ( .160 ) 3.55 ( .140 ) 1.15 ( .045 ) m in 6.47 ( .255 ) 6.10 ( .240 ) 3.78 ( .149 ) 3.54 ( .139 ) - a - 10.54 ( .415 ) 10.29 ( .405 ) 2.87 ( .113 ) 2.62 ( .103 ) 15.24 ( .600 ) 14.84 ( .584 ) 14.09 ( .555 ) 13.47 ( .530 ) 3x 1.40 ( .0 55 ) 1.15 ( .0 45 ) 2.54 ( .100 ) 2x 0.36 ( .014 ) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part marking information to-220ab package outline to-220ab dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a IRF540N 2014-8-9 8 www.kersemi.com
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