mstc110 document number: ms tc110 www. smsemi .com sep.06,2013 1 module type maximum ratings thermal characteristics thyristor/diode modules v rrm / v d r m 8 00 to 1 60 0v i t av 110 amp features ? international standard package ? high surge capability ? glass passivated chip ? simple mounting ? h eat transfer through aluminum oxide dcb ceramic isolated metal baseplate ? type v rrm v rsm mstc 110 - 08 mst c110 - 12 mstc 110 - 16 800v 1200v 1600v 900v 1300v 1700v symbol conditions values units i tav s ine 180 o ; tc= 85 110 a i t sm t vj =45 t=10ms, sine t vj = 12 5 t=10ms, sine 2250 1900 a i 2 t t vj =45 t=10ms, sine t vj = 12 5 t=10m s, sine 25000 18000 a2s viso l a.c.50hz;r.m.s.;1min 30 00 v tvj - 40 to 1 30 tstg - 40 to 125 mt to terminals(m5) 3 15% nm ms to heatsink(m6) 5 15% nm di/dt t vj = t vjm , 2/3 v drm ,i g =500ma t r<0.5us,tp>6us 150 a/us dv/dt t j = t vjm ,2/3 v drm , linear vol tage rise 1000 v/us a maximum allowable acceleration 50 m/ s 2 weight module(approximately) 100 g symbol conditions values units rth(j - c) c ont.;per thyristor / per m odule 0.28/0.14 /w rth(c - s) per thyristor / per m odule 0.2/0.1 /w circuit applications ? power converters ? lighting control ? dc m otor c ontrol and drives ? h eat and temperature control m s t c 1 3 2 4 7 5 6
mstc110 document number: ms tc110 www. smsemi .com sep.06,2013 2 electrical characteristics symbol conditio ns values units min. typ. max. v t m t=25 i tm = 300 a 1. 72 v i rrm / i drm t vj =t vjm ,v r =v rrm ,v d =v drm 20 ma v to for power - loss calculations only (t vj =125 ) 0.9 v r t t vj =t vjm 2 m ? v gt t vj =25 , v d =6v 3 v i gt t vj =25 , v d =6v 150 ma v gd t vj = 1 25 , v d =2/3 v drm 0.25 v i gd t vj = 1 25 , v d =2/3 v drm 6 ma i l t vj =25 , r g = 33 ? 300 600 ma i h t vj =25 , v d =6v 150 250 ma tgd t vj =25 , i g = 1 a , di g /dt= 1 a/us 1 us tq t vj =t vjm 100 us
mstc110 document number: ms tc110 www. smsemi .com sep.06,2013 3 performance curves fig1. power dissipation fig2.forward current derating curve 0 i tav 50 1 00 a 150 200 w 150 100 50 p tav 0 rec.30 rec. 60 rec. 120 sin . 180 dc fig3. transient thermal impedance fig4. max non - repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1 10 s 100 0.50 / w 0.25 0 z th(j - c ) z th(j - s ) 10 100 ms 1000 50hz 2500 a 1250 0 0 v tm 0.5 1.0 1.5 v 2.0 300 a 200 100 i t 0 max . t yp . 25 125 dc sin . 180 rec. 120 rec. 60 rec.30 i tavm 200 a 160 120 80 40 0 0 tc 50 100 130 150
mstc110 document number: ms tc110 www. smsemi .com sep.06,2013 4 package outline information case : t 1 dimensions in mm fig6. gate trigger characteristics 1/2 msc t 110 v gd 125 i gd 125 i gt v gt 20v;20 ? pg(tp) 0.001 i g 0.01 0.1 1 10 a 100 100 v 10 1 v g 0.1 1.1 - 40 25 125 t vj 1 5 0 w ( 0 . 1 m s ) 1 0 0 w ( 0 . 5 m s ) 5 0 w ( 8 m s )
|
