s m d t y p e i c www.kexin.com.cn 1 s m d t y pe mosfet v d ss = 100v i d = 2.3 a ( v g s = 10v ) r d s ( o n ) 234m ( v g s = 10v ) r d s ( o n ) 267m ( v g s = 6v ) r d s ( o n ) 278m ( v g s = 4.5v ) g d s a bs olut e max imum r at ings ta = 25 s y m bol rati ng uni t v d s 100 v g s 2 0 t a = 25 2.3 t a = 70 1.8 i d m 5 t a = 25 2.5 t a = 70 1.6 r t h ja 100 r t h jc 50 t j 150 t st g - 55 to 150 v a p ul s ed dr ai n cur r ent p ar am eter conti nuous dr ai n cur r ent i d dr ai n- s our c e v ol tage g ate- s our c e v ol tage j unc ti on t em per atur e s tor age t em per atur e range p d w p ow er di s s i pati on /w t her m al res i s tanc e.j unc ti on- to- a m bi ent t her m al res i s tanc e.j unc ti on- to- cas e feat ur es t j = 150 *1 * 1 s ur fac e m ounted on 1? x 1? f r4 b oar d. p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gate 2 . source 3 . drain
e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 100 v v d s = 100v , v g s = 0v 1 v d s = 100v , v g s = 0v , t j = 55 10 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s , i d = 250 a 1.2 2.8 v v g s = 10v , i d = 1.5a 234 v g s = 6v , i d = 1a 267 v g s = 4.5v , i d = 0.5a 278 o n s tate dr ai n cur r ent i d ( o n ) v g s = 4.5v , v d s 5v 5 a f or w ar d t r ans c onduc tanc e g fs v d s = 20v , i d = 1.5a 2 s input capac i tanc e c i ss 190 o utput capac i tanc e c o ss 22 rev er s e t r ans fer capac i tanc e c r ss 13 g ate res i s tanc e r g v g s = 0v , v d s = 0v , f= 1m hz 0.3 1.4 2.8 t otal g ate char ge q g 5.2 10.4 g ate s our c e char ge q g s 0.75 g ate dr ai n char ge q g d 1.4 t ur n- o n del ay t i m e t d ( o n ) 30 45 t ur n- o n ri s e t i m e t r 26 39 t ur n- o ff del ay t i m e t d ( o f f ) 17 26 t ur n- o ff f al l t i m e t f 12 20 b ody di ode rev er s e rec ov er y t i m e t r r i f = 1.3a , d i /d t = 100a / s 22 33 b ody di ode rev er s e rec ov er y char ge q r r i f = 1.3a , d i /d t = 100a / s 21 32 nc m ax i m um b ody - di ode conti nuous cur r ent i s 2.1 a di ode f or w ar d v ol tage v s d i s = 1.3a ,v g s = 0v 0.8 1.2 v pf nc ns z er o g ate v ol tage dr ai n cur r ent i d s s a m v g s = 4.5v , v d s = 50v , r l = 39 ,r g e n = 1 r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e v g s = 0v , v d s = 50v , f= 1m hz v g s = 4.5v , v d s = 50v , i d = 1.6a 2 s m d t y p e i c smd type m o sfet mar k ing m ar k i ng d4* f a.pulse test ; pulse width 300 s,duty cycle2% a a a n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) www.kexin.com.cn
s m d t y p e i c smd type mosfet ty pic al c har ac t er is it ic s o u t p u t ch a r a ct er ist ic s on -re sistan ce vs. drain cu r r en t an d gate vo ltag e g a t e c h a r g e 0 1 2 3 4 5 0 0 . 5 1 1 . 5 2 i d - d r a i n c u r re n t ( a ) v d s - d r a in - t o - so ur ce v o lt ag e (v ) v g s = 1 0 v t h r u 5 v v g s = 3 v v g s = 4 v 0 . 1 6 0 . 1 8 0.2 0 0 . 2 2 0 . 2 4 0 . 2 6 0 . 2 8 0 1 2 3 4 5 r d s ( o n ) - o n - resistance () i d - d r a in cu r r en t (a ) v g s = 6 v v g s = 4 . 5 v v g s = 1 0 v 0 2 4 6 8 1 0 0 1 . 5 3 4 . 5 6 v g s - g a t e - t o - s o u r c e v o l t a g e ( v ) q g - t ot a l ga t e c h ar g e ( n c ) v d s = 8 0 v v d s = 2 5 v v d s = 5 0 v i d = 1 . 6 a t r a n sfe r c h aracteristics cap acita nce on-resistance v s. jun ctio n t emp er a t ure 0 0 . 6 1 . 2 1 . 8 2 . 4 3 0 1 2 3 4 i d - d r a i n c u r re n t ( a ) v g s - ga t e - t o - s o u r c e v o l t a g e ( v ) t c = 2 5 c t c = - 5 5 c t c = 1 2 5 c 0 6 0 1 2 0 1 8 0 2 4 0 3 0 0 0 2 0 4 0 6 0 8 0 1 0 0 c - c a p a c i t an c e ( p f ) v d s - d r a in - t o - so ur ce v o lt ag e (v ) c i s s c o s s c rs s 0 . 4 0 . 8 5 1 . 3 1 . 7 5 2 . 2 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 r d s ( o n ) - o n - r e s i st a n c e (n o r m a li z e d ) t j - ju n c t i o n t e m p e r a t u r e ( c ) i d = 1 . 5 a v g s = 6 v v g s = 1 0 v n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) w w w . k e x i n . c o m . c n 3
4 s m d t y p e i c smd type m ofet ty pic al c har ac t er is it ic s s o urce-drain d iod e fo r w ard vo ltag e thresh old volt age 0 . 1 1 1 0 0 . 0 0. 3 0. 6 0. 9 1 . 2 i s - s o u rc e c u r re n t ( a ) v s d - s o u r c e - t o - d r a i n v o l t a g e (v ) t j = 1 5 0 c t j = 2 5 c 1 . 6 1 . 9 2 . 2 2 . 5 2 . 8 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v g s ( t h ) ( v ) t j - t e m p e r a t u r e ( c ) i d = 2 5 0 a on -resi stanc e vs. gate-to-sou r c e voltag e sing le pulse po wer 0 0 . 1 5 0 . 3 0 . 4 5 0 . 6 2 4 6 8 1 0 r d s ( o n ) - on - resistance () v g s - ga t e - t o - s o u r c e v o l t a g e ( v ) t j = 1 2 5 c t = 2 5 c i d = 1 . 5 a 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (s) p o w er ( w ) t a = 25 c safe operating area 0. 0 0 1 0. 0 1 0. 1 1 1 0 0 . 1 1 1 0 1 0 0 1 0 0 0 i d - d r a in cur r ent (a) v d s - d r a i n - t o - s o u r c e v o l t a g e ( v ) * v g s > m i n i m u m v g s a t w hi ch r d s ( o n ) 1 0 0 s 1 0 0 m s l i m i t e d b y r d s ( o n ) * 1 m s t a = 2 5 c s i n g l e p u l se b v d s s l i m it e d 1 0 m s 1 s, 10 s d c n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) w w w . k e x i n . c o m . c n
s m d t y p e i c 5 s m d t y pe m o sfet ty pic al c har ac t er is it ic s c u rrent derating* 0. 0 0. 7 1. 4 2. 1 2. 8 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 i d - d r a i n c u r re n t ( a ) t c - c a s e t e m p e r at u r e ( c ) po w er, j u nc ti o n - t o - f o o t 0 0 . 6 1 . 2 1 . 8 2 . 4 3 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 p o wer (w) t c - c a s e te m p e r a t u r e ( c ) p o w er , ju n ct io n - t o - am b ien t 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 p o we r (w) t a - a m b i e n t t e m p e r a t u r e ( c ) n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) w w w . k e x i n . c o m . c n
6 s m d t y p e i c s m d t y pe m o sfet ty pic al c har ac t er is it ic s norm alized t h erma l trans ient im p e da n c e, ju n cti o n - t o - am b ien t 10 - 3 10 - 2 1 10 1000 10 - 1 10 - 4 100 0. 2 0. 1 s qu are w a ve p u lse d u ration (s) n ormalized ef fecti v e t ransient therma l i mpedance 1 0 . 1 0.01 t 1 t 2 n o te s : p dm 1 . d u ty c yc l e , d = 2 . p e r u n i t b a s e = r t h j a = 1 6 6 c/ w 3 . t j m - t a = p dm z t h j a (t) t 1 t 2 4 . s u r f a c e m o u n t e d d u t y c y c le = 0 . 5 single p u lse 0.02 0.05 no r m alized t h erm al tran sient imp edan ce, jun ctio n -to-fo ot 10 - 3 10 - 2 10 1 10 - 1 10 - 4 0 .2 0 .1 d u t y c y c l e = 0 . 5 s qu are w a ve p u lse d u ration (s) n ormalized ef fecti v e t ransient therma l i mpedance 1 0 .1 0.01 0.05 single p u lse 0.02 n-cha nne l mo s f e t si2 3 2 4 ds-hf ( k i 2 3 2 4 d s - h f) w w w . k e x i n . c o m . c n
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