WPM2005 power mosfet and schottky diode features z featuring a mosfet and schottky diode z independent pinout to each device to ease circuit design z ultra low v f schottky applications z li--ion battery charging z high side dc-dc conversion circuits z high side drive for small brushless dc motors z power management in portable, battery powered products mosfet maximum ratings (t j = 25 unless otherwise noted) schottky diode maximum ratings (t j = 25 unless otherwise noted) parameter symbol limits unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 1 a dfn32-8l . marking: pin connections: 8 7 6 5 4 3 2 1 c c d d a a s g 1 8 c d ja j = specific device code a = date code order information part number package shipping WPM2005 r 8/tr dfn3*2- 8 3000 tape & reel l parameter symbol value units d rain ? to ? s ource voltage v ds ? 2 0 v g ate ? to ? s ource voltage v gs 8. 0 v c ontinuous d rain c urrent (note 1 ) s teady s tate t j = 25 c i d ? 2. 9 a t j = 85 c ? 1.8 t 5 s t j = 25 c ? 3.7 power d issipation (note 1 ) s teady s tate t j = 25 c p d 1.4 w t 5 s 2.2 pulsed d rain c urrent t p = 1 0 s i d m ? 13 a operating junction and s torage temperature t j , t s t g ? 55 to 15 0 c s ource c urrent (body d iode) i s 1.7 a l ead temperature for s oldering purposes ( 1 / 8 from case for 1 0 s) t l 26 0 c 1. s urface mounted on fr 4 board using 1 in sq pad size, 1 oz c u . 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
mosfet electrical characteristics unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v,i d = -250 a -20 v zero gate voltage drain current i dss v ds =-16v,v gs = 0v -1 a gate Csource leakage current i gss v gs = f 8v,v ds = 0v f 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d =-250 a -0.45 v v gs = -4.5v, i d = -2. 7 a 120 m
static drain-source on-resistance r ds(on) v gs = -2.5v,i d = - 2.2 a 160 m
forward transconductance g fs v ds = -10v, i d = - 2 .7a 7 .0 s dynamic characteristics input capacitance c iss 700 pf output capacitance c oss 150 pf reverse transfer capacitance c rss v ds = -10v, v gs = 0v, f = 1.0 mhz 90 pf switching characteristics turn-on delay time t d(on) 10 ns turn-on rise time t r 20 ns turn-off delay time t d(off) 60 ns turn-off fall time t f v gs = -4.5v, v dd = -1 0 v, i d = - 1.0 a, r g = 6.0
, 30 ns total gate charge q g(tot) 5 nc threshold gate charge q g(th) gate-source charge q gs 1.4 nc gate-drain charge q gd v ds = -10v,i d = - 2.7 a, v gs =-4.5v 0. 9 nc drain-source diode characteristics and maximun ratings forward diode voltage v sd v gs = 0v,i s = - 1.5 a -1.5 schottky diode electrical characteristics (tj = 25 e c unless otherwise noted) parameter symbol min. typ. max. unit conditions v f1 0.425 i f =0.1a v f2 0.480 i f =0.5a forward voltage v f3 0.575 v i f =1a i r1 20 av r =10v reverse current i r2 1 00 av r =20v welding temperature curve msl=1 thermal resistance ratings parameter symbol max units junction ? to ? a mbient C s teady s tate (note 2 ) r j a 8 9 c /w junction ? to ? a mbient C t 5 s (note 2 ) r j a 57 c /w 2. s urface mounted on fr 4 board using 1 in sq pad size, 1 oz c u . (t j =25 5.0 6. 0.4 nc v -0.81 WPM2005 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t j = 25 c unless ot h erwise noted) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs t c =--55 _ c 125 _ c 25 _ c output characteristics transfer characteristics -v ds -- drain-to-source voltage (v) -- drain current (a) -i d -v gs -- gate-to-source voltage (v) -- drain current (a) -i d -1.5v -2v -2.5v -- on-resistance ( r ds(on) 8 ) 0.6 0.8 1.0 1.2 1.4 1.6 --50 --25 0 25 50 75 100 125 150 0 1 2 3 4 5 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 -v ds -- drain-to-source voltage (v) c rss c oss c iss v ds =-10v i d =-2.7a -i d -- drain current (a) v gs =-4.5v i d =-2.7a v gs =-2.5v v gs =-4.5v gate charge on-resistance vs. drain current -- gate-to-source voltage (v) q g -- total gate charge (nc) c -- capacitance (pf) -v gs capacitance on-resistance vs. junction temperature t j -- junction temperature ( _ c) (normalized) -- on-resistance ( r ds(on) 8 ) v gs =-1.8v 0 200 400 600 800 048121620 =-5thru -3v WPM2005 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 012345 t j = 150 _ c i d =-2.7a 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage -- on-resistance ( r ds(on) 8 ) -v sd gs -- gate-to-source voltage (v) -- source current (a) -i s t j =25 _ c 0 30 50 10 20 power (w) single pulse power time (sec) 40 1 100 600 10 10 -- 1 10 -- 2 10 -- 4 10 -- 3 10 -- 3 10 -- 2 1 10 600 10 -- 1 10 -- 4 100 -- 0 . 2 -- 0 . 1 0.0 0.1 0.2 0.3 0.4 --50 --25 0 25 50 75 100 125 150 i d =-250 m a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) -v gs(th) t j -- temperature ( _ c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja _ c/w 3. t jm -- t a =p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm --source-to-drainvoltage(v) -v =89 WPM2005 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
10 -- 3 10 -- 2 110 10 -- 1 10 -- 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance -- junction capacitance (pf) 0.8 1.0 0.1 1 5 forward voltage drop v f -- forward voltage drop (v) -- forward current (a) i f 00.20.4 t j = 150 _ c capacitance 0 30 60 90 120 150 048121620 v ka -- reverse voltage (v 125 150 0.0001 1 20 reverse current vs. junction temperature t j -- junction temperature ( _ c) -- reverse current (ma) i r 0 255075100 c t 10 v 0.001 0.01 0.1 10 20 v 0.6 t j =25 _ c ) WPM2005 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
power dissipation characteristics 1. the package of WPM2005 is dfn3x2-8l, surface mounted on fr4 board using 1 in sq pad size 1 oz cu r ja is 89 /w. 2. the power dissipation p d is based on t j(max) =150c, and the relation between t j and p d is t j = t a + r ja * p d , the maximum power dissipation is determined by r ja . 3. the r ja is the thermal impedance from junction to ambient, using larger pcb pad size can get smaller r ja and result in larger maximum power dissipation. 89 /w when mounted on a 1 in 2 pad of 1 oz copper. WPM2005 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
dfnwb3x2-8l(p0.65t0.75/0.85) package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.700/0.800 0.800/0.900 0.028/0.031 0.031/0.035 a1 0.000 0.050 0.000 0.002 a3 0.153 0.253 0.006 0.010 d 2.9 3.1 0.114 0.122 e 1.9 2.1 0.075 0.083 d1 0.82 1.020 0.032 0.040 e1 0. 20 00. 40 0 0.0 08 0.0 16 k0. 3 00min. 0.0 10 min. b 0.250 0.350 0.010 0.014 e 0.650typ. 0.026typ. l 0.250 0.350 0.010 0.014 top view bottom view side view WPM2005 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
dfn 3x2-8l pcb layout guide p p p p p p p p p p WPM2005 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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