WPM2014 single p-channel, -20v, -4.9a, power mosfet descriptions the WPM2014 is p-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2014 is pb-free. features ? trench technology ? supper high density cell design ? excellent on resistance for higher dc current ? extremely low threshold voltage ? small package dfn2x2-6l applications ? driver for relay, solenoid, motor, led etc. ? dc-dc converter circuit ? power switch ? load switch ? charging dfn2x2-6l pin configuration (top view) wlsi syww wlsi = company code s = device code y = year (last digit) ww = week marking order information device package shipping WPM2014-6/tr dfn2x2-6l 3000/reel&tape v ds (v) rds(on) ( ) -20 0.050 @ v gs = C 4.5v 0.063 @ v gs = C 2.5v 0.074 @ v gs d s 1 3 2 4 5 6 d g d d d s 1 3 2 4 5 6 = C 1.8v 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
a surface mounted on fr4 board using 1 in sq pad size, 1oz cu. b surface mounted on fr4 board using the minimum recommended pad size, 1oz cu. c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j(max) =150c. absolute maximum ratings (ta = 25 c, unless otherwise noted ) parameter symbol 10 s steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a =25c i d -4.9 -4.1 a t a =70c -3.9 -3.2 maximum power dissipation a t a =25c p d 2.0 1.4 w t a =70c 1.3 0.9 continuous drain current (t j = 150 c) b t a =25c i d -3.5 -2.9 a t a =70c -2.8 -2.3 maximum power dissipation b t a =25c p d 1.0 0.7 w t a =70c 0.6 0.4 pulsed drain current c i dm -20 a operating junction temperature t j 150 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient thermal resistance a t 10 s r ja 45 60 c/w steady state 62 85 junction-to-ambient thermal resistance b t 10 s r ja 80 115 steady state 120 170 junction-to-case thermal resistance steady state r jc 32 40 WPM2014 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds =-16 v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 8.0v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.4 -0.55 -0.9 v drain-to-source on-resistance r ds(on) v gs = -4.5v, i d = -4.0a 50 60 m? v gs = -2.5v, i d = -3.5a 63 72 v gs = -1.8v, i d = -2.3a 74 98 forward transconductance g fs v ds = -5 v, i d =-3.5a 10 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = -6v 1200 pf output capacitance c oss 130 reverse transfer capacitance c rss 115 total gate charge q g(tot) v gs = -4.5 v, v ds = -6 v, i d = -3.3 a 11.5 nc threshold gate charge q g(th) 0.7 gate-to-source charge q gs 1.0 gate-to-drain charge q gd 1.5 switching characteristics turn-on delay time td(on) v gs = -4.5 v, v ds = -6 v, r l =6 ? , r g =3 ? 7.6 ns rise time tr 5.5 turn-off delay time td(off) 62 fall time tf 18 drain-to-source diode characteristics forward voltage v sd v gs = 0 v, i s = -1.6a -0.5 -0.74 -1.5 v WPM2014 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics on-resistance vs. drain current on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature 0 1 2 3 4 5 0 5 10 15 20 vgs=-3.0 ~ -4.5v vgs=-2.0v vgs=-2.5v vgs=-1.5v - i d s - d r a i n - t o - s o u r c e c u r r e n t ( a ) -v ds -drain-to-source voltage(v) vgs=-1.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4 8 12 16 20 v ds = -5v t=125 o c t=25 o c t=-50 o c - i d s - d r a i n t o s o u r c e c u r r e n t ( a ) -v gs -gate-to-source voltage(v) 2 4 6 8 10 20 40 60 80 100 v gs =-4.5v v gs =-2.5v r d s ( o n ) - o n - r e s i s t a n c e ( m ? ) -i ds -drain-to-source current(a) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 50 60 70 80 i ds =-3.3a r d s ( o n ) - o n - r e s i s t a n c e ( m ? ) -v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 v gs =-4.5v,id=-3.3a r d s ( o n ) - o n - r e s i s t a n c e ( m ? ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 i ds =-250ua - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) temperature ( o c) WPM2014 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0 4 8 12 16 20 0 250 500 750 1000 1250 1500 1750 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) -v ds drain-to-source voltage (v) 0.30.40.50.60.70.80.9 0.3 0.6 0.9 1.2 1.5 drain-to-source diode forward voltage safe operating power transient thermal response (junction-to-ambient) t=25 o c t=150 o c -i sd -source to drain current(a) -v sd -source-to-drain voltage(v) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 2 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 6 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 100 ms limited by r ds(on) bvdss limited 1ms 100 s 10 ms 1s,10s dc v ds - drain-to-source voltage (v) - drain current (a) i d 0 5 10 15 20 25 30 power (w) time (s) 10 1000 0.1 0.01 0.001 100 1 WPM2014 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn2x2-6l symbol dimensions in millimeter min. typ. max. a 0.70 0.75 0.80 a1 0.00 - 0.05 a3 0.20 ref. d 1.95 2.00 2.05 e 1.95 2.00 2.05 d2 0.85 0.90 0.95 e2 0.95 1.00 1.05 d3 0.25 0.30 0.35 e3 0.51 0.56 0.61 b 0.25 0.30 0.35 l 0.25 0.30 0.30 e 0.65 bsc. WPM2014 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
recommend pcb layout (unit: mm) option 1: high power applications option 2: normal applications 0.65 0.40 0 . 4 0 0 . 4 0 1 . 0 0 0 . 4 0 1.05 2 . 2 0 0.65 0.65 0.40 0 . 4 0 2 . 2 0 WPM2014 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
