elektronische bauelemente bcp157 -3a, -80v pnp epitaxial planar transistor 12-nov-2014 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ?? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? -60volt v ceo ? 3 amp continuous current ? low saturation voltage package information package mpq leader size sot-89 1k 7? inch absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v dc -3 collector current -continuous pulse 1 i c -6 a p c 0.5 collector power dissipation p c 2 2 w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) paramete r s y mbol min. t yp . max. unit test conditions collector-base breakdown voltage v (br)cbo -80 - - v i c = -100 a, i e =0 collecto r -emitter breakdown v (br)ceo -60 - - v i c = -10ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -100 a, i c =0 collector cut-off current i cbo -- -0.1 a v cb = -60v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 70 200 - v ce = -2v, i c = -50ma 100 200 300 v ce = -2v, i c = -500ma 80 170 - v ce = -2v, i c = -1a dc current gain h fe 40 150 - v ce = -2v, i c = -2a v ce(sat)1 - -150 -300 mv i c = -1a, i b = -100ma collector-emitter sa turation voltage v ce(sat)2 - -450 -600 mv i c = -3a, i b = -300ma base-emitter satura tion voltage v be(sat) - -0.9 -1.25 v i c = -1a, i b = -100ma base-emitter sa turation voltage on v be(on) - -0.8 -1 v i c = -1a, v ce = -2v output capacitance c co - - 30 pf v cb = -10v, i e =0, f=1mhz transition frequency f t 100 140 - mhz v ce = -5v, i c = -100ma, f=100mhz t on - 40 - switching time t off - 450 - ns v cc = -10v,i c = -500ma, i b1 = -i b2 = -50ma note: 1. measured under pulse condition. pulse width<300us, duty cycle<2% 2. spice parameter data is avail able upon urquest for this device. sot-89 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.2 a e c d b k h f g l j 1 2 3 4 1. base 2. collector 3. emitter
elektronische bauelemente bcp157 -3a, -80v pnp epitaxial planar transistor 12-nov-2014 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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