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| to-92mod plastic-encapsulate transistors 2SC2383 transistor (npn) feature y high voltage: v ceo =160v y large continuous collector current capability y complementary to 2sa1013 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current -continuous 1 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v(br) cbo i c = 100 a , i e =0 160 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 160 v emitter-base breakdown voltage v(br) ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb =150v, i e =0 1 a collector cut-off current i cer v cb =150v,r eb = 10m ? 10 a emitter cut-off current i ebo v eb =6v, i c =0 1 a h fe1 v ce =5v, i c =200ma 60 320 dc current gain h fe2 v ce =5v, i c =10ma 40 collector-emitter saturation voltage v ce(sat) i c =500m a, i b =50ma 1 v base-emitter voltage v be i c =5ma, v ce = 5v 0.75 v transition frequency f t v ce =5v, i c =200ma 20 mhz classification of h fe1 rank r o y range 60-120 100-200 160-320 to-92m od 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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