cph3116 / CPH3216 no.6405-1/5 applications ? relay drivers, lamp drivers, motor drivers, flash. features ? adoption of mbit processes. ? large current capacitance. ? low collector-to-emitter saturation voltage. ? high-speed switching. ? ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). ? high allowable power dissipation. ( ) : cph3116 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)80 v collector-to-emitter voltage v ces (--50)80 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)1.0 a collector current (pulse) i cp (--)3 a base current i b (--)200 ma collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8mm) 0.9 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0 (--)0.1 m a emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 m a dc current gain h fe v ce =(--)2v, i c =(--)100ma 200 560 marking : cph3116 : ar, CPH3216 : cr continued on next page. ordering number : en6405e 81006ea ms im / 62504 ts im tb-00000308 / 83100 ts (koto) / 21000 ts (koto) ta-2706 sanyo semiconductors data sheet cph3116 / CPH3216 pnp / npn epitaxial planar silicon transistors dc / dc converter applications tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. http://semicon.sanyo.com/en/network
cph3116 / CPH3216 no.6405-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit gain-bandwideth product f t v ce =(--)10v, i c =(--)300ma 420 mhz output capacitance cob v cb =(--)10v, f=1mhz (9)6 pf v ce (sat)1 i c =(--)500ma, i b =(--)10ma (--280) (--430) mv collector-to-emitter saturation voltage 130 190 mv v ce (sat)2 i c =(--)300ma, i b =(--)6ma (--145) (--220) mv 90 135 mv base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)10ma (--)0.81 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--50) v 80 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 m a, r be =0 (--50) v 80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)5 v turn-on time t on see specified test circuit. 35 ns storage time t stg see specified test circuit. (170) ns 330 ns fall time t f see specified test circuit. (30)40 ns package dimensions switching time test circuit unit : mm (typ) 7015a-003 50ma --1000 --800 --600 --400 --200 0 i c -- v ce 0 --0.2 --0.4 --0.6 --0.8 --1.0 i b =0ma collector-to-emitter voltage, v ce -- v collector current, i c -- a 1000 800 600 400 200 0 i c -- v ce 0 0.2 0.4 0.6 0.8 1.0 collector-to-emitter voltage, v ce -- v collector current, i c -- a cph3116 CPH3216 --4ma --10ma --8ma --6ma --30ma --20ma --40ma --50ma 10ma 8ma 6ma 4ma 2ma i b =0ma 30ma 20ma 40ma --2ma it01643 it01644 1 : base 2 : emitter 3 : collector sanyo : cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 + + 50 w input output v r r b r l v cc =25v 100 m f 470 m f v be = --5v pw=20 m s i b1 i b2 dc 1% (for pnp, the polarity is reversed.) 20i b1 = --20i b2 =i c =500ma
cph3116 / CPH3216 no.6405-3/5 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 2 3 5 7 10 2 3 5 7 100 7 --0.1 23 5 57 --1.0 23 57 --10 23 57 --100 cph3116 f=1mhz collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 7 0.1 23 5 57 1.0 23 57 10 23 57 100 2 3 5 7 10 2 3 5 7 100 CPH3216 f=1mhz it01651 it01652 it01647 it01649 it01648 it01650 2 10 3 5 7 2 3 5 7 100 1000 h fe -- i c dc current gain, h fe collector current, i c -- a ta=75 c --25 c cph3116 v ce = --2v 25 c h fe -- i c dc current gain, h fe collector current, i c -- a ta=75 c --25 c CPH3216 v ce =2v 25 c 2 3 5 7 100 2 3 2 3 5 5 7 1000 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 2 3 2 3 5 5 7 1000 2 3 5 7 100 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 23 57 23 57 23 --0.01 --0.1 --1.0 23 23 3 57 2 57 --0.01 --0.1 --1.0 23 57 0.1 0.01 23 3 57 1.0 2 CPH3216 v ce =10v 2 3 5 7 100 2 3 5 7 1000 10 23 57 0.1 23 57 1.0 23 0.01 cph3116 v ce = --10v --1.0 --0.9 --0.8 --0.7 --0.6 --0.4 --0.3 --0.2 --0.1 0 --0.5 i c -- v be collector current, i c -- a 25 c --25 c ta=75 c base-to-emitter voltage, v be -- v cph3116 v ce = --2v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 25 c --25 c ta=75 c CPH3216 v ce =2v 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 it01645 it01646 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
cph3116 / CPH3216 no.6405-4/5 a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a 100ms dc operation 100 m s 500 m s 10ms 1.4 1.2 1.0 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c 1ms i cp =3a i c =1a 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 0.1 0.01 23 57 23 57 23 57 0.1 1.0 10 100 it01659 it01660 cph3116 / CPH3216 cph3116 / CPH3216 v ce (sat) -- i c collector current, i c -- a --25 c cph3116 i c / i b =50 ta=75 c v ce (sat) -- i c collector current, i c -- a CPH3216 i c / i b =50 --25 c ta=75 c v be (sat) -- i c collector current, i c -- a cph3116 i c / i b =50 ta= --25 c 75 c 25 c v be (sat) -- i c collector current, i c -- a CPH3216 i c / i b =50 ta= --25 c 75 c 25 c 2 3 5 7 2 3 5 7 --0.01 --0.01 --0.1 23 57 --1.0 2 357 --0.1 --1.0 it01655 it01657 it01656 it01658 7 --10 5 3 2 7 --1.0 --0.1 --0.01 23 57 --0.1 23 57 --1.0 5 3 2 7 5 3 2 10 7 5 3 2 0.1 0.1 0.01 23 57 1.0 23 57 1.0 1.0 7 5 3 2 0.1 0.01 0.01 23 57 0.1 23 57 1.0 7 5 3 2 25 c 25 c v ce (sat) -- i c collector current, i c -- a --25 c ta=75 c cph3116 i c / i b =20 v ce (sat) -- i c collector current, i c -- a CPH3216 i c / i b =20 --25 c ta=75 c it01653 it01654 7 5 3 2 --1.0 --0.1 7 5 3 2 23 57 --0.1 --0.01 23 57 --1.0 --0.01 1.0 7 5 3 2 7 5 3 2 0.1 0.01 0.01 23 57 0.1 1.0 23 57 25 c 25 c collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) for pnp, minus sign is omitted. mounted on a ceramic board (600mm 2 5 0.8mm)
cph3116 / CPH3216 no.6405-5/5 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2006. specifications and information herein are subject to change without notice.
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