AM3434N these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on ) and to ensure minimal power loss and heat dissipation. typical applications are dc - dc converters and power management in portable and battery - powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0 .032 @ v gs = 4 .5 v 6 .0 0.044 @ v gs = 2 .5v 5 .0 pr oduct su mma ry 30 ? low r ds(on ) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop - 6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 5 6 symb ol maximum units v ds 30 v gs 12 t a =25 o c 6.0 t a =70 o c 4.6 i dm 20 i s 1.6 a t a =25 o c 2.0 t a =70 o c 1.3 t j , t stg -55 to 150 o c cont inuou s source current (d iod e conduct ion) a absolute ma x imum ratin gs (t a = 25 o c unless other wise noted) param e t er pu l se d dra in current b v gate-source vo l tage dra in -source vo l tage cont inuou s dra in current a i d a power d i ss ip at ion a p d operat ing junct ion and storage temperature range w symbol maximum units t <= 5 sec 62.5 steady-state 110 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.7 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 6.0 a 32 v gs = 2.5 v, i d = 5.0 a 44 forward tranconductance a g fs v ds = 10 v, i d = 4.0 a 11.3 s diode forward voltage v sd i s = 1.6 a, v gs = 0 v 0.75 v total gate charge q g 6.0 gate-source charge q gs 1.0 gate-drain charge q gd 1.5 turn-on delay time t d(on) 8 rise time t r 24 turn-off delay time t d(off) 35 fall-time t f 10 mohm parameter limits unit v dd = 10 v, r l = 15 o, i d = 1 a, v gen = 4.5 v v ds = 10 v, v gs = 4.5 v, i d = 4.0 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on) AM3434N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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