 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| mosfet inchange IRF830 n-channel mosfet transistor ? features ? with to-220 package 1 2 3 ? simple drive requirements ? fast switching ?v dss =500v; r ds(on) ? 1.5 |?;i d =4.5a ? 1.gate 2.drain 3.source ? absolute maximum ratings tc=25 ?? symbol parameter rating unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage ?20 v i d drain current-continuous@ t c =25 ?? 4.5 a p tot total dissipation@t c =25 ?? 100 w t j max. operating junction temperature 150 ?? t stg storage temperature -65~150 ?? to-220 ? electrical characteristics tc=25 ?? symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs =0; i d =0.25ma 500 v v gs(th) gate threshold voltage v ds = v gs ; i d =0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =2.7a 1.5 |? i gss gate source leakage current v gs = ?20v ;v ds =0 ?100 na i dss zero gate voltage drain current v ds =500v; v gs =0 1.0 ua v sd diode forward voltage i f =4.5a; v gs =0 1.6 v
|
Price & Availability of IRF830
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |