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bta20 bw/cw btb20 bw/cw snubberless triacs n high commutation: (di/dt)c > 18a/ms without snubber n high surge current: i tsm = 200a n v drm up to 800v n bta family: insulating voltage = 2500v (rms) (ul recognized: e81734) features the bta/btb20 bw/cw triac family are high per- formance glass passivated chips technology. the snubberless ? concept offer suppression of rc network and it is suitable for application such as phase control and static switching on inductive or resistive load. description to-220ab symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 70c 20 a btb tc = 90c i tsm non repetitive surge peak on-state current (tj initial = 25c) tp = 8.3ms 210 a tp = 10ms 200 i 2 ti 2 t value tp = 10ms 200 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 500ma di g /dt = 1a/s repetitive f = 50hz 20 a/s non repetitive 100 tstg tj storage and operating junction temperature range -40 to +150 -40 to +125 c tl maximum lead soldering temperature during 10s at 4.5mm from case 260 c absolute ratings (limiting values) symbol parameter bta/btb20-...bw/cw unit 600 700 v drm v rrm repetitive peak off-state voltage tj = 125c 600 700 v a1 a2 g 2014-6-10 1 www.kersemi.com
symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 2.8 c/w btb 1.7 rth (j-c) ac junction to case for 360 conduction angle (f = 50hz) bta 2.1 c/w btb 1.3 gate characteristics (maximum values) p g(av) =1w p gm = 10w (tp = 20s) i gm = 4a (tp = 20s) v gm = 16v (tp = 20s) thermal resistance symbol test conditions quadrant bta / btb20 unit bw cw i gt v d = 12v (dc) r l =33 w tj = 25c i - ii - iii min. 2 1 ma max. 50 35 v gt v d = 12v (dc) r l =33 w tj = 25c i - ii - iii max. 1.5 v v gd v d =v drm r l = 3.3k w tj =125c i - ii - iii min. 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/s tj = 25c i - ii - iii typ. 2 s i l i g = 1.2i gt tj = 25c i - iii typ. 50 - ma ii 90 - i - ii - iii max. - 80 i h *i t = 500ma gate open tj = 25c max. 75 50 ma v tm *i tm = 28a tp = 380s tj = 25c max. 1.70 v i drm i rrm v drm rated v rrm rated tj = 25c max. 0.01 ma tj = 125c max. 3 dv/dt * linear slope up to v d = 67% v drm gate open tj = 125c typ. 750 500 v/ m s min. 500 250 (di/dt)c* without snubber tj = 125c typ. 36 22 a/ms min. 18 11 * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics bta(b)20 bw/cw 2014-6-10 2 www.kersemi.com
package i t(rms) v drm /v rrm sensitivity specification a v bw cw bta (insulated) 20 600 x x 700 x x btb (uninsulated) 600 x product information bt a 20 - 600 bw triac series insulation: a: insulated b: non insulated current: 20a voltage: 600: 600v 700: 700v sensitivity ordering information bta(b)20 bw/cw 2014-6-10 3 www.kersemi.com
fig. 3: correlation between maximum rms power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact (btb). fig. 4: rms on-state current versus case temper- ature. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth(j-c) zth(j-a) tp(s) fig. 5: relative variation of thermal impedance versus pulse duration. fig. 6: relative variation of gate trigger current and holding current versus junction temperature. fig. 1: maximum rms power dissipation versus rms on-state current (f = 50hz).(curves are cut off by (di/dt)c limitation) fig. 2: correlation between maximum rms power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact (bta). bta(b)20 bw/cw 2014-6-10 4 www.kersemi.com
fig. 9: on-state characteristics (maximum values). fig. 7: non repetitive surge peak on-state current versus number of cycles. fig. 8: non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- responding value of i 2 t. 2014-6-10 5 www.kersemi.com bta(b)20 bw/cw

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