sot-23 sot-23 plastic-encapsulate diodes CESD3V3AP esd protection diode description the CESD3V3AP is designed to protec t voltage sensitive 1 components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z stand ? off voltage: 3.3 v z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) per human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 15 8.0 kv esd voltage per human body model 16 kv total power dissipation on fr-5 board (note 1) p d 225 mw thermal resistance junction ? to ? ambient r ja 556 / w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage te mperature r ang t j, t stg -55 ~ +150 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the reco mmended. operating conditions is no t implied. extended exposure to stresses above the recommended operating cond itions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. 1 2 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
electrical characteristics (t a = 25c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c max. capacitance @v r =0 and f =1mhz electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) device* device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t v c @i pp =1 a max i pp + p pk + (w) c (pf) pin 1 to 3 max max min max ma v a max typ CESD3V3AP 3m3 3.3 10 5.0 5.9 1.0 7.5 13.3 300 150 *other voltages available upon request. +surge current waveform per figure 3 2. v br is measured with a pulse test current i t at an ambient temperature of 25c. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
|
