2014. 6. 11 1/3 semiconductor technical data ktc3503 triple diffused npn transistor revision no : 4 high-definition crt display, video output applications. features h high breakdown voltage : v ceo ? 300v. h small reverse transfer capacitance and excellent high frequency characteristic. : c re =1.8pf (v cb =30v, f=1mhz) h complementary kta1381. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) note : h fe classification o:60 q 120, y:100 q 200 characteristic symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 5 v collector current dc i c 100 ma pulse i cp 200 collector power dissipation ta=25 ? p c 1.5 w tc=25 ? 7 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =200v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =10v, i c =10ma 60 - 200 transition frequency f t v ce =30v, i c =10ma - 150 - mhz collector output capacitance c ob v cb =30v, i e =0, f=1mhz - 2.6 - pf reverse transfer capacitance c re v cb =30v, i e =0, f=1mhz - 1.8 - pf collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2ma - - 0.6 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2ma - - 1.0 v collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 300 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 300 - - v base-emitter breakdown voltage v (br)ebo i e =10 a, i c =0 5 - - v
2014. 6. 11 2/3 ktc3503 revision no : 4
2014. 6. 11 3/3 ktc3503 revision no : 4
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