Part Number Hot Search : 
11004 5CD09 21140 3202483 00150 LH1549HB PBSS404 TC9146AP
Product Description
Full Text Search
 

To Download RFH25N20 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  <^>e.m.l-l.ond.uctoi ij-*ioaucti, line, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfh25n18, RFH25N20 power mqs field-effect transistors n-channel enhancement-mode power field-effect transistors terminal diagram 25 a, 180v -200v rosioni = 0.15 0 features: soa is power-dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device high-current, low-inductance package n-channel enhancement mode the rfh25n18 and rfh2sn20' are n-channel enhance- ment-mode silicon-gate power field-effect translators designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers tor high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the rfh-types are supplied in the jedec to-218ac plastic package. terminal designation rfh25n18 ,oubce RFH25N20 drain jedec to-218ac maximum ratings, absolute-maximum values (tc = 25c): drain-source voltage vms drain-gate voltage, r., = 1 mo vooo gatg-source voltage : -. vos drain current, rms continuous ; i0 pulsed ion power dissipation @ tc - 25c p, derate above tc - 26* c operating and storage temperature t,, t.?, rfhs5n18 RFH25N20 180 180 20 25 60 150 1.2 200 200 v v v a a w w/c -55 to +150 . nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfh25n18, RFH25N20 electrical characteristics, it caie temperature (tc) ? 2sc unleo otherwise specified. characteristic drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-oft delay time fall time , thermal resistance junctlon-to-caaa symbol bvoss vas(th) loss loss vm(on)? ro?(on)a gt.a cih cm, c? td(on) t, ta(off) ti r?jc test conditions lo = 1 ma voa = 0 vos = vm lo = 1 ma vds = 145 v v08 = 160v tc = 125c vds - 145 v vds = 160v vRFH25N20 series limits rfhzsn1s mln. 180 2 _ ? ? ? ? 7 ? ? ? 40(typ) 150(typ) 300(typ) 120(typ) - max. ? 4 1 50 100 1.875 5 .15 ? 3500 900 i 400 80 225 400 200 0.83 RFH25N20 mln. 200 2 - " ? 7 ? ? - ?(typ) 150(typ) 300(typ) 120(typ> - max. ? 4 1 50 100 1.875 5 .15 ? ? ? 3500 900 400 80 225 400 200 0.83 units v v /"a na v n mho pf. ns ?c/w "pulsed: pulse duration = 300 /is max., duty cycle = 2%. source-drain diode ratings and characteristics characteristic diode forward voltage v50 ? reverse recovery time u test conditions ibo=12.5a if = 4a, dir/di~100a//is limits rfh2sn18 mln. - m?x. 1.4 300 (typ.) rfh2sn20 mln. - max. 1.4 300 (typ.) units v ns ' pulse test: width < 300 ps. duty cycle a 2%.


▲Up To Search▲   

 
Price & Availability of RFH25N20

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X