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2sb892 / 2sd1207 rev.0 i page 1 of 5 i www.onsemi.com applications power supplies, relay drivers, lamp drivers, and automotive wiring. features fbet and mbit processed (original process of sanyo). low saturation voltage. large current capacity and wide aso. specifications ( ) : 2sb892 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)4 a collector dissipation p c 1w junction temperature tj 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)50v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a continued on next page. 2sb892 / 2sd1207 pnp / npn epitaxial planar silicon transistors large-current switching applications ordering number : EN930D ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 2sb892_2sd1207/d
2sb892 / 2sd1207 rev.0 i page 2 of 5 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1* v ce =(--)2v, i c =(--)100ma 100 560 h fe 2v ce =(--)2v, i c =(--)1.5a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)12 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (--0.3)0.15 (--0.7)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v * : the 2sb892 / 2sd1207 are graded as follows by h fe at 100ma : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 package dimensions unit : mm (typ) 7520-002 123 0.5 0.5 0.5 0.6 1.45 1.45 6.0 4.7 5.0 3.0 1.0 8.5 14.0 1 : emitter 2 : collector 3 : base sanyo : mp i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a -- 2 . 4 -- 2 . 0 -- 1 . 6 -- 0 . 8 -- 1 . 2 -- 0 . 4 0 0--2 .4 -- 1 . 6 - -2.0 -- 1 . 2 -- 0 . 4 - -0.8 2.4 2.0 1.6 0.8 1.2 0.4 0 02.4 1.6 2.0 1.2 0.4 0.8 - -2ma - -4ma - -6ma - -8ma - -50ma 2ma 4ma 8ma 50ma 40ma 25ma 15ma - -20ma - -10ma i b =0 ma itr08646 i b =0 ma itr08647 2sb892 2sd1207
2sb892 / 2sd1207 rev.0 i page 3 of 5 i www.onsemi.com h fe -- i c collector current, i c -- ma dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma h fe -- i c collector current, i c -- ma dc current gain, h fe collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma 2sb892 v ce = --2v itr08652 100 1000 5 7 3 2 5 7 3 2 10 - -100 7 3 25 7 3 25 3 25 - -1000 - -10 2sd1207 v ce =2v 100 1000 5 7 3 2 5 7 3 2 10 100 7 3 25 7 3 25 3 25 1000 10 itr08653 2sb892 v cb = --10v 10 100 7 5 3 2 7 5 3 2 1000 - -100 - -10 25 37 2 5 323 7 - -1000 2sd1207 v cb =10v 100 10 25 37 2 5 323 7 1000 itr08654 10 100 7 5 3 2 7 5 3 2 1000 itr08655 0 0.4 0.2 1.2 0.8 1.0 0.6 - -2ma - -1ma - -3ma -- 4ma - -5ma - -6ma -- 7ma - -1200 - -1000 - -400 - -800 - -600 - -200 0 0- -12 -- 8 - -10 -- 6 -- 2 -- 4 7ma 6ma 5ma 4ma 3ma 2ma 1ma 1200 1000 400 800 600 200 0 - -1200 - -1000 - -400 - -800 - -600 - -200 0 1200 1000 400 800 600 200 0 012 810 6 24 i b =0 ma itr08648 2sb892 2sd1207 i b =0 ma itr08649 2sd1207 v ce =2v itr08651 0- -0.4 --1.2 - -0.8 --1.0 - -0.2 --0.6 2sb892 v ce = --2v itr08650
2sb892 / 2sd1207 rev.0 i page 4 of 5 i www.onsemi.com p c -- ta ambient temperature, ta -- c collector dissipation, p c -- mw a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- ma cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 0.1 2 5 5 3 2 5 3 1.0 2 5 3 10 0.01 1.0 5 37 5 37 2 5 37 2 10 100 i cp =4a 10ms 100ms dc operation 1ms i c =2a itr08661 0 1200 600 400 1000 800 200 20 060 40 80 100 140 120 160 itr08660 2sb892 / 2sd1207 2sb892 / 2sd1207 (for pnp minus sign is omitted.) - -100 7 23 5 7 23 23 5 - -1000 - -10 100 7 23 5 7 23 23 5 1000 10 - -100 - -10 - -1.0 - -0.01 - -0.1 5 2 5 2 5 2 5 2 itr08658 2sb892 i c / i b =20 100 10 1.0 0.01 0.1 5 2 5 2 5 2 5 2 itr08659 2sd1207 i c / i b =20 3 2 7 5 7 5 10 100 37 2 1.0 10 537 2 100 5 itr08657 2sd1207 f=1mhz 3 2 2 7 5 7 5 10 100 37 2 - -1.0 --10 537 2 - -100 5 itr08656 2sb892 f=1mhz
2sb892 / 2sd1207 rev.0 i page 5 of 5 i www.onsemi.com

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