q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF v ces = 1200 v i c =30 a v ce(sat) typ = 2.0 v absolute maximum ratings HIH30N120TF 1200v field stop trench igbt symbol parameter value units v ces collector-emitter voltage 1200 v i c collector current ? continuous (t c = 25 e ) 60 a collector current ? continuous (t c = 100 e ) 30 a i cm collector current ? pulsed (note 1) 90 a i f diode forward current ? continuous (t c = 25 e ) 60 a diode forward current ? continuous (t c = 100 e ) 30 a i fm diode current ? pulsed (note 1) 90 a v ges gate-emitter voltage 20 v p d power dissipation ? continuous (t c = 25 e ) 329 w power dissipation ? continuous (t c = 100 e ) 132 t j operating temperature range -55 to +150 e t stg storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc (igbt) junction-to-case -- 0.38 e /w r jc (diode) junction-to-case -- 2.1 r ja junction-to-ambient -- 40 dec 2013 notes. 1. pulse width limited by max junction temperature ? 1200v field stop trench technology ? high speed switching ? low conduction loss ? positive temperature coefficient ? easy parallel operation features e c g to-3p
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF electrical characteristics of the igbt t c =25 q c unless otherwise specified symbol parameter test conditions min typ max units v ge(th) gate-emitter threshold voltage v ce = v ge , i c = 30 ma 3.5 5.5 7.5 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a t c = 25 e -- -- 2.0 2.3 2.5 -- v t c = 125 e on characteristics bv ces collector-emitter breakdown voltage v ge = 0 v, i c = 1 ma 1200 -- -- v i ces zero gate voltage collector current v ce = 1200 v, v ge = 0 v -- -- 1 ma i ges gate-emitter leakage current v ge = 20 v, v ce = 0 v -- -- 250 2 off characteristics c iss input capacitance v ce = 30 v, v ge = 0 v, f = 1.0 mhz -- 4000 -- ? c oss output capacitance -- 105 -- ? c rss reverse transfer capacitance -- 72 -- ? dynamic characteristics t d(on) turn-on time v cc = 600 v, i c = 30 a, r g = 10 ? 9 ge = 15v inductive load, t c = 25 e -- 40 -- t r turn-on rise time -- 50 -- t d(off) turn-off delay time -- 245 -- t f turn-off fall time -- 70 150 e on turn-on switching loss -- 4.5 6.75 mj e off turn-off switching loss -- 0.85 1.28 mj e ts total switching loss -- 5.35 8.03 mj t d(on) turn-on time v cc = 600 v, i c = 30 a, r g = 10 ? 9 ge = 15v inductive load, t c = 125 e -- 46 -- t r turn-on rise time -- 48 -- t d(off) turn-off delay time -- 256 -- t f turn-off fall time -- 142 -- e on turn-on switching loss -- 4.87 7.3 mj e off turn-off switching loss -- 1.82 2.73 mj e ts total switching loss -- 6.67 10.03 mj q g total gate charge v cc = 600v, i c = 30 a, v ge = 15 v -- 220 330 nc q ge gate-emitter charge -- 30 45 nc q gc gate-collector charge -- 90 135 nc switching characteristics package marking and odering information device marking week marking package packing quantity rohs status HIH30N120TF ywwx to-3p tube 30 pb free HIH30N120TF ywwxg to-3p tube 30 halogen free
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF v fm diode forward voltage i f = 30 a t c = 25 e -- -- 2.25 2.53 2.75 -- v t c = 125 e t rr diode reverse recovery time i f = 30 a, di/dt = 200 a/ v t c = 25 e -- -- 300 360 450 -- ns t c = 125 e i rr diode peak reverse recovery current t c = 25 e -- -- 30 34 45 -- a t c = 125 e q rr diode reverse recovery charge t c = 25 e -- -- 4400 6120 -- -- nc t c = 125 e electrical characteristics of the diode
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF igbt characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF igbt characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF igbt characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF diode characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N120TF package dimension 19.9 0.20 9.6 0.20 13.6 0.20 15.6 0.20 14.9 0.20 3.5 0.20 16.5 0.20 5.45typ 5.45typ 2 0.20 1 0.20 3 0.20 13.9 0.20 18.7 0.20 1.5 0.20 4.8 0.20 1.4 0.20 0.6 0.20 3 0.20 { v t z w g
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