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is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 1 1.1w audio power amplifier with active-low shutdown mode may 2013 general description the is31ap4991a has been designed for demanding audio applications such as mobile phones and permits the reduction of the number of external components. it is capable of delivering 1.1w of continuous rms output power into an 8 ? load @ 5v. an externally-controlled standby mode reduces the supply current to much less than 1 a. it also includes internal thermal shutdown protection. the unity-gain stable amplifier can be configured by external gain setting resistors. features ? operating from v cc = 2.7v ~ 5.5v ? 1.1w output power @ v cc = 5v, thd+n= 1%, f = 1khz, with 8 ? load ? ultra-low consumption in standby mode (much less than 1 a) ? 56db psrr @217hz in grounded mode ? near-zero click-and-pop ? ultra-low distortion (0.074%@0.5w, 1khz) ? sop-8 and msop-8 package applications ? mobile phones ? pdas ? portable electronic devices ? notebook computer typical application circuit figure 1 typical application circuit (single-ended input)
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 2 figure 2 typical application circuit (differential input)
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 3 pin configuration package pin configuration (top view) sop-8 msop-8 pin description no. pin description 1 sdb the device enters shutdown mode when a low level is applied on this pin. 2 bypass bypass capacitor pin which provides the common mode voltage (v cc /2). 3 in+ positive input of the first amplifier. 4 in- negative input of the first amplifier, receives the audio input signal. connected to the feedback resistor r f and to the input resistor r in . 5 out- negative output of the is31ap4991a. connected to the load and to the feedback resistor r f . 6 vcc positive analog supply of the chip. 7 gnd ground. 8 out+ positive output of the is31ap4991a. connected to the load.
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 4 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP4991A-GRLS2-TR is31ap4991a-sls2-tr sop-8, lead-free msop-8, lead-free 2500 2500 copyright ? ? ? 2013 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 5 absolute maximum ratings (note 1) supply voltage, v cc - 0.3v ~ +6.0v voltage at any input pin - 0.3v ~ v cc +0.3v maximum junction temperature, t jmax 150c storage temperature range, t stg - 65c ~ +150c operating temperature range, t a ? 40c ~ +85c maximum power dissipation, sop-8(25c/85c) (note 2) msop-8(25c/85c) 720mw/380mw 590mw/310mw note 1: stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note 2: thermal simulation @ 25c /85c ambient temperature, still air convection, 2s2p boards according to jesd51. the pd (max by pac kage) is evaluated by (tjmax-ta)/theta-ja. electrical characteristics the following specifications apply for c in = 0.1 f, r in = r f = 20k ? , c bypass = 0.47 f, unless otherwise specified. limits apply for t a = 25c. v cc =5v (note 3 or specified) symbol parameter condition min. typ. max. unit i cc quiescent power supply current v cc = 0v, io = 0a, no load 3.0 ma i sdb shutdown current v sdb = gnd, r l = 1 a v sd_h shutdown voltage input high v cc = 5.5v 1.4 v v sd_l shutdown voltage input low v cc = 2.7v 0.4 v v os output offset voltage 15 mv po output power (8 ? ) thd+n = 1%; f = 1khz 1.15 w thd+n = 10%; f = 1khz 1.40 t wu wake-up time (note 4) c bypass = 0.47 f 100 250 ms thd+n total harmonic distortion+noise (note 4) po = 0.5wrms; f = 1khz 0.074 % psrr power supply rejection ratio (note 4) v ripple p-p = 200mv input grounded f = 217hz 56 db f = 1khz 68 the following specifications apply for c in = 0.1 f, r in = r f = 20k ? , c bypass = 0.47 f, unless otherwise specified. limits apply for t a = 25c. v cc =3v (note 3 or specified) symbol parameter condition min. typ. max. unit i cc quiescent power supply current v cc = 0v, io = 0a, no load 2.2 ma i sdb shutdown current v sdb = gnd, r l = 1 a po output power (8 ? ) thd+n = 1%; f = 1khz 380 mw thd+n = 10%; f = 1khz 490 t wu wake-up time (note 4) c bypass = 0.47 f 90 200 ms thd+n total harmonic distortion+noise (note 4) po = 0.3wrms; f = 1khz 0.076 % note 3: production testing of the device is performed at 25c. functional operation of the device and parameters specified over other temperature range, are guaranteed by design, characterization and process control. note 4: guaranteed by design.
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 6 typical performance characteristic thd+n(%) output power(w) 0.01 20 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10m 20m 50m 100m 200m 500m 1 v cc = 3.0v r l = 8 ? f = 1khz figure 3 thd+n vs. output power 0.01 0.02 0.05 0.1 0.2 1 2 10 thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 20 v cc = 3.0v p o = 0.25w r l = 8 ? figure 5 thd+n vs. frequency psrr(db) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) -120 +0 -100 -80 -60 -40 -20 v cc = 5.0v r l = 8 ? figure 7 psrr vs. frequency thd+n(%) output power(w) 0.01 20 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10m 20m 50m 100m 200m 500m 1 v cc = 5.0v r l = 8 ? f = 1khz 2 figure 4 thd+n vs. output power 0.01 0.02 0.05 0.1 0.2 1 2 10 thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 20 v cc = 5.0v p o = 0.8w r l = 8 ? figure 6 thd+n vs. frequency output voltage(v) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(hz) 10u 100u 20u 30u 40u 50u 70u v cc = 5.0v figure 8 noise floor
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 7 supply voltage(v) output power(w) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2.5 3 3.5 4 4.5 5 5.5 thd+n = 1% thd+n = 10% r l = 8 ? figure 9 output power vs. power supply
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 8 application information btl configuration principle the is31ap4991a is a monolithic power amplifier with a btl output type. btl (bridge tied load) means that each end of the load is connected to two single-ended output amplifiers. thus, we have: single-ended output 1 = v out+ = v out (v) single ended output 2 = v out- = -v out (v) and v out + - v out- = 2v out (v) the output power is: l out out r v p rms 2 ) 2 ( ? for the same power supply voltage, the output power in btl configuration is four times higher than the output power in single ended configuration. gain in a typical application schematic the typical application schematic is shown in figure 1 on page 1. in the flat region (no c in effect), the output voltage of the first stage is (in volts): in f in out r r v v ) ( ? ? ? for the second stage: v out+ = -v out- (v) the differential output voltage is (in volts): in f in out out r r v v v 2 ? ? ? ? the differential gain, g v , is given by: in f in out out v r r v v v g 2 ? ? ? ? ? v out- is in phase with v in and v out+ is phased 180 with v in . this means that the positive terminal of the loudspeaker should be connected to v out+ and the negative to v out- . low and high frequency response in the low frequency region, c in starts to have an effect. c in forms with r in a high-pass filter with a -3db cut-off frequency. f cl is in hz. in in cl c r f ? 2 1 ? in the high frequency region, you can limit the bandwidth by adding a capacitor (c f ) in parallel with r f . it forms a low-pass filter with a -3db cut-off frequency. f ch is in hz. f f ch c r f ? 2 1 ? decoupling of the circuit two capacitors are needed to correctly bypass the is31ap4991a: a power supply bypass capacitor c s and a bias voltage bypass capacitor c bypass . c s has particular influence on the thd+n in the high frequency region (above 7khz) and an indirect influence on power supply disturbances. with a value for c s of 1 f, you can expect thd+n levels similar to those shown in the datasheet. in the high frequency region, if c s is lower than 1 f, i t increases thd+n and disturbances on the power supply rail are less filtered. on the other hand, if c s is higher than 1 f, those disturbances on the power supply rail are more filtered. c bypass has an influence on thd+n at lower frequencies, but its function is critical to the final result of psrr (with input grounded and in the lower frequency region). if c bypass is lower than 0.47 f, thd+n increases at lower frequencies and psrr worsens. if c bypass is higher than 0.47 f, the benefit on thd+n at lower frequencies is small, but the benefit to psrr is substantial. note that c in has a non-negligible effect on psrr at lower frequencies. the lower the value of c in , the higher the psrr is. wake-up time (t wu ) when the standby is released to put the device on, the bypass capacitor c bypass will not be charged immediately. as c bypass is directly linked to the bias of the amplifier, the bias will not work properly until the c bypass voltage is correct. the time to reach this voltage is called wake-up time or t wu and specified in the electrical characteristics table with c bypass = 0.47 f. pop performance pop performance is intimately linked with the size of the input capacitor c in and the bias voltage bypass capacitor c bypass . the size of c in is dependent on the lower cut-off frequency and psrr values requested. the size of c bypass is dependent on thd+n and psrr values requested at lower frequencies. moreover, c bypass determines the speed with which the amplifier turns on.
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 9 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 10 classification profile
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 10 package information sop-8
is31ap4991a integrated silicon solution, inc. ? www.issi.com rev. c, 05/13/2013 11 msop-8
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