r07ds0416ej0300 rev.3.00 page 1 of 6 jun 07, 2011 preliminary datasheet rjk2017dpp silicon n channel mos fet high speed power switching features ? low on-resistance r ds(on) = 0.036 typ. (at i d = 22.5 a, v gs = 10 v, ta = 25 c) ? low leakage current ? high speed switching outline renesas package code: prss0003ab-a (package name: to-220fn) 1 2 3 d s g 1. gate 2. drain 3. source absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v drain current i d note4 45 a drain peak current i d (pulse) note1 135 a body-drain diode reverse drain current i dr 45 a avalanche current i ap note3 12 a avalanche energy e ar note3 9.6 mj channel dissipation pch note2 30 w channel to case thermal impedance ch-c 4.17 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c 4. limited by maximum safe operation area r07ds0416ej0300 (previous: rej03g1797-0200) rev.3.00 jun 07, 2011
rjk2017dpp preliminary r07ds0416ej0300 rev.3.00 page 2 of 6 jun 07, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 200 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 200 v, v gs = 0 gate to source leak current i gss ? ? 1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 2 ? 4 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 0.036 0.047 i d = 22.5 a, v gs = 10 v note5 input capacitance ciss ? 4800 ? pf output capacitance coss ? 290 ? pf reverse transfer capacitance crss ? 90 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 50 ? ns rise time t r ? 40 ? ns turn-off delay time t d(off) ? 95 ? ns fall time t f ? 40 ? ns i d = 22.5 a v gs = 10 v r l = 4.5 rg = 10 total gate charge qg ? 66 ? nc gate to source charge qgs ? 26 ? nc gate to drain charge qgd ? 16 ? nc v dd = 160 v v gs = 10 v i d = 45 a body-drain diode forward voltage v df ? 0.88 1.35 v i f = 45 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 150 ? ns i f = 45 a, v gs = 0 di f /dt = 100 a/ s notes: 5. pulse test
rjk2017dpp preliminary r07ds0416ej0300 rev.3.00 page 3 of 6 jun 07, 2011 main characteristics 11 0 0 10 0.1 1 0.01 drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. drain current (typical) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area case temperature tc (c) static drain to source on state resistance r ds(on) () static drain to source on state resistance vs. temperature (typical) 0.01 0.1 1 10 100 1000 1 0.1 10 100 1000 0 0.05 0.10 0.15 0.20 0.25 -25 0 50 25 75 100 125 150 i d = 45 a 12.5 a 22.5 a 100 80 60 40 20 0 4 8 12 16 20 drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 02 46810 100 10 1 0.1 v ds = 10 v pulse test tc = 75c 25c ?25c tc = 25c 1 shot pw = 100 s 10 s operation in this area is limited by r ds(on) pulse test ta = 25c 5.5 v 5 v v gs = 4.5 v 6 v 6.5 v 7 v 10 v v gs = 10 v ta = 25c pulse test v gs = 10 v pulse test 1 0.1 10 100 1000 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) di / dt = 100 a / s v gs = 0, ta = 25 c
rjk2017dpp preliminary r07ds0416ej0300 rev.3.00 page 4 of 6 jun 07, 2011 020406080100 10000 1000 400 0 16 300 12 200 8 100 4 20 40 60 80 100 0 100 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0 0.4 0.8 1.2 1.6 2.0 100 40 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) case temperature tc (c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 20 60 80 0 2 1 3 4 5 -25 0 25 50 75 100 125 150 v ds = 10 v i d = 10 ma 1 ma 0.1 ma v ds v gs v dd = 50 v 100 v 160 v v dd = 160 v 100 v 50 v ciss coss crss v gs = 0 f = 1 mhz ta = 25c i d = 45 a ta = 25c v gs = 0 v ta = 25c pulse test
rjk2017dpp preliminary r07ds0416ej0300 rev.3.00 page 5 of 6 jun 07, 2011 vin monitor d.u.t. vin 10 v r l v dd = 100 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform normalized transient thermal impedance vs. pulse width pulse width pw (s) normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 1 0.3 0.1 0.03 0.01 3 0.001 0.003 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse tc = 25c p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 4.17c/w, tc = 25c
rjk2017dpp preliminary r07ds0416ej0300 rev.3.00 page 6 of 6 jun 07, 2011 package dimensions ? 2.0g mass[typ.] ? prss0003ab-a renesas code jeita package code previous code unit: mm 3.2 0.2 2.8 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 10 0.3 1.1 0.2 6.5 0.3 3 0.3 3.6 0.3 15 0.3 14 0.5 1.1 0.2 4.5 0.2 2.6 0.2 package name to-220fn ordering information orderable part number quan tity shipping container rjk2017dpp-00-t2 1050 pcs box (tube)
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