? semiconductor components industries, llc, 2015 march, 2015 ? rev. 7 1 publication order number: bcw68glt1/d bcw68gl general purpose transistor pnp silicon features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector?emitter v oltage v ceo ?45 vdc collector?base v oltage v cbo ?60 vdc emitter?base v oltage v ebo ?5.0 vdc collector current ? continuous i c ?800 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be af fected. thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage t emperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in 99.5% alumina. sot?23 case 318 style 6 dg = specific device code m = date code* = pb?free package marking diagram 1 2 3 device package shipping ? ordering information bcw68glt1g, NSVBCW68GLT1G sot?23 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd801 1/d. dg m collector 3 1 base 2 emitter (note: microdot may be in either location) bcw68glt3g sot?23 (pb?free) 10000 / tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. www. onsemi.com
bcw68gl www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage (i c = ?10 madc, i b = 0) v (br)ceo ?45 ? ? vdc collector?emitter breakdown voltage (i c = ?10 adc, v eb = 0) v (br)ces ?60 ? ? vdc emitter?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ?5.0 ? ? vdc collector cutoff current (v ce = ?45 vdc, i e = 0) (v ce = ?45 vdc, i b = 0, t a = 150 c) i ces ? ? ? ? ?20 ?10 nadc adc emitter cutoff current (v eb = ?4.0 vdc, i c = 0) i ebo ? ? ?20 nadc on characteristics dc current gain (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?100 madc, v ce = ?1.0 vdc) (i c = ?300 madc, v ce = ?1.0 vdc) h fe 120 160 60 ? ? ? 400 ? ? ? collector?emitter saturation voltage (i c = ?500 madc, i b = ?50 madc) v ce(sat) ? ? ?0.7 vdc base?emitter saturation voltage (i c = ?500 madc, i b = ?50 madc) v be(sat) ? ? ?2.0 vdc small?signal characteristics current?gain ? bandwidth product (i c = ?20 madc, v ce = ?10 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ? ? 18 pf input capacitance (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? ? 105 pf noise figure (i c = ?0.2 madc, v ce = ?5.0 vdc, r s = 1.0 k , f = 1.0 khz, bw = 200 hz) n f ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bcw68gl www. onsemi.com 3 typical characteristics figure 1. dc current gain vs. collector current figure 2. collector emitter saturation v oltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 500 1 0.1 0.01 0.001 0.01 0.1 1 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter vol tage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c figure 5. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current?gain?bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100
bcw68gl www. onsemi.com 4 typical characteristics i b , base current (ma) figure 6. saturation region 100 10 1.0 v r , reverse voltage (volts) figure 7. temperature coefficients +1.0 i c , collector current (ma) figure 8. capacitances -0.1 -1.0 -1.0 -10 -100 -1000 -2.0 -1.0 0 v ce , collector-emitter voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -10 -100 -1.0 -10 -100 t j = 25 c i c = -10 ma i c = -100 ma i c = -300 ma i c = -500 ma vc for v ce(sat) vb for v be c ob c ib
bcw68gl www. onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bcw68glt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your lo cal sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent? marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its paten t rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or othe r applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death ma y occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidi aries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of per sonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. sci llc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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